Abstract:
The present disclosure is directed to a gas sensor device that detects gases with large molecules (e.g., a gas with a molecular weight between 150 g/mol and 450 g/mol), such as siloxanes. The gas sensor device includes a thin film gas sensor and a bulk film gas sensor. The thin film gas sensor and the bulk film gas sensor each include a semiconductor metal oxide (SMO) film, a heater, and a temperature sensor. The SMO film of the thin film gas sensor is an thin film (e.g., between 90 nanometers and 110 nanometers thick), and the SMO film of the bulk film gas sensor is an thick film (e.g., between 5 micrometers and 20 micrometers thick). The gas sensor device detects gases with large molecules based on a variation between resistances of the SMO thin film and the SMO thick film.
Abstract:
The present disclosure is directed to a gas sensor device that detects gases with large molecules (e.g., a gas with a molecular weight between 150 g/mol and 450 g/mol), such as siloxanes. The gas sensor device includes a thin film gas sensor and a bulk film gas sensor. The thin film gas sensor and the bulk film gas sensor each include a semiconductor metal oxide (SMO) film, a heater, and a temperature sensor. The SMO film of the thin film gas sensor is an thin film (e.g., between 90 nanometers and 110 nanometers thick), and the SMO film of the bulk film gas sensor is an thick film (e.g., between 5 micrometers and 20 micrometers thick). The gas sensor device detects gases with large molecules based on a variation between resistances of the SMO thin film and the SMO thick film.
Abstract:
The present disclosure is directed to a gas sensor device that detects gases with large molecules (e.g., a gas with a molecular weight between 150 g/mol and 450 g/mol), such as siloxanes. The gas sensor device includes a thin film gas sensor and a bulk film gas sensor. The thin film gas sensor and the bulk film gas sensor each include a semiconductor metal oxide (SMO) film, a heater, and a temperature sensor. The SMO film of the thin film gas sensor is an thin film (e.g., between 90 nanometers and 110 nanometers thick), and the SMO film of the bulk film gas sensor is an thick film (e.g., between 5 micrometers and 20 micrometers thick). The gas sensor device detects gases with large molecules based on a variation between resistances of the SMO thin film and the SMO thick film.
Abstract:
A device for measuring an electrical impedance of biologic tissue may include electrodes configured to contact the biologic tissue and generate a differential voltage thereon. The device may include a first circuit coupled to the electrodes and configured to force an oscillating input signal therethrough, and a differential amplitude modulation (AM) demodulator coupled to the plurality of electrodes. The differential AM demodulator may be configured to demodulate the differential voltage, and generate a base-band signal representative of the demodulated differential voltage. The device may further include an output circuit downstream from the differential AM demodulator and may be configured to generate an output signal representative of the electrical impedance as a function of the base-band signal.
Abstract:
A gas measurement device measures gas using a gas sensor including a sense resistance exposed to the gas and a reference resistance not exposed to the gas. The gas measurement device applies a first current value and a second current value to the sensor. A detector functions to detect a first resistance variation and a second resistance variation of the sense resistance exposed to the gas with respect to the reference resistance as a function of the first current value and the second current value, respectively. The resistance variation dependent on relative humidity is then determined as a function of the first and second resistance variations and a first constant. The resistance variation dependent on gas content is then determined as a function of the first and second resistance variations and a second (different) constant.
Abstract:
A semiconductor gas sensor device includes a first cavity that is enclosed by opposing first and second semiconductor substrate slices. At least one conducting filament is provided to extend over the first cavity, and a passageway is provided to permit gas to enter the first cavity. The sensor device may further including a second cavity that is hermetically enclosed by the opposing first and second semiconductor substrate slices. At least one another conducting filament is provided to extend over the second cavity.
Abstract:
A semiconductor gas sensor device includes a first cavity that is enclosed by opposing first and second semiconductor substrate slices. At least one conducting filament is provided to extend over the first cavity, and a passageway is provided to permit gas to enter the first cavity. The sensor device may further including a second cavity that is hermetically enclosed by the opposing first and second semiconductor substrate slices. At least one another conducting filament is provided to extend over the second cavity.
Abstract:
A device for measuring an electrical impedance of biologic tissue may include electrodes configured to contact the biologic tissue and generate a differential voltage thereon. The device may include a first circuit coupled to the electrodes and configured to force an oscillating input signal therethrough, and a differential amplitude modulation (AM) demodulator coupled to the plurality of electrodes. The differential AM demodulator may be configured to demodulate the differential voltage, and generate a base-band signal representative of the demodulated differential voltage. The device may further include an output circuit downstream from the differential AM demodulator and may be configured to generate an output signal representative of the electrical impedance as a function of the base-band signal.
Abstract:
A gas measurement device measures gas using a gas sensor including a sense resistance exposed to the gas and a reference resistance not exposed to the gas. The gas measurement device applies a first current value and a second current value to the sensor. A detector functions to detect a first resistance variation and a second resistance variation of the sense resistance exposed to the gas with respect to the reference resistance as a function of the first current value and the second current value, respectively. The resistance variation dependent on relative humidity is then determined as a function of the first and second resistance variations and a first constant. The resistance variation dependent on gas content is then determined as a function of the first and second resistance variations and a second (different) constant.
Abstract:
A semiconductor gas sensor device includes a first cavity that is enclosed by opposing first and second semiconductor substrate slices. At least one conducting filament is provided to extend over the first cavity, and a passageway is provided to permit gas to enter the first cavity. The sensor device may further including a second cavity that is hermetically enclosed by the opposing first and second semiconductor substrate slices. At least one another conducting filament is provided to extend over the second cavity.