公开(公告)号：US09455253B2

公开(公告)日：2016-09-27

申请号：US14730826

申请日：2015-06-04

Applicant: STMicroelectronics (Tours) SAS

Inventor： Samuel Menard ,  Dalaf Ali

IPC: H01L27/08 ,  H01L23/528 ,  H01L29/747 ,  H01L29/08

CPC classification number: H01L27/0817 ,  H01L23/528 ,  H01L29/0834 ,  H01L29/747 ,  H01L2924/0002 ,  H01L2924/13033 ,  H01L2924/00

Abstract: A bidirectional switch formed in a substrate includes first and second main vertical thyristors in antiparallel connection. A third auxiliary vertical thyristor has a rear surface layer in common with the rear surface layer of the first thyristor. A peripheral region surrounds the thyristors and connects the rear surface layer to a layer of the same conductivity type of the third thyristor located on the other side of the substrate. A metallization connects the rear surfaces of the first and second thyristors. An insulating structure is located between the rear surface layer of the third thyristor and the metallization. The insulating structure extends under the periphery of the first thyristor. The insulating structure includes a region made of an insulating material and a complementary region made of a semiconductor material.

Abstract translation: 形成在衬底中的双向开关包括反并联连接的第一和第二主垂直晶闸管。 第三辅助垂直晶闸管具有与第一晶闸管的后表面层共同的后表面层。 周边区域围绕晶闸管并且将后表面层连接到位于基板另一侧上的与第三晶闸管相同的导电类型的层。 金属化连接第一和第二晶闸管的后表面。 绝缘结构位于第三晶闸管的后表面层与金属化之间。 绝缘结构在第一晶闸管的外围延伸。 绝缘结构包括由绝缘材料制成的区域和由半导体材料制成的互补区域。

公开(公告)号：US20160027774A1

公开(公告)日：2016-01-28

申请号：US14730826

申请日：2015-06-04

Applicant: STMicroelectronics (Tours) SAS

Inventor： Samuel Menard ,  Dalaf Ali

IPC: H01L27/08 ,  H01L23/528

CPC classification number: H01L27/0817 ,  H01L23/528 ,  H01L29/0834 ,  H01L29/747 ,  H01L2924/0002 ,  H01L2924/13033 ,  H01L2924/00

Abstract: A bidirectional switch formed in a substrate includes first and second main vertical thyristors in antiparallel connection. A third auxiliary vertical thyristor has a rear surface layer in common with the rear surface layer of the first thyristor. A peripheral region surrounds the thyristors and connects the rear surface layer to a layer of the same conductivity type of the third thyristor located on the other side of the substrate. A metallization connects the rear surfaces of the first and second thyristors. An insulating structure is located between the rear surface layer of the third thyristor and the metallization. The insulating structure extends under the periphery of the first thyristor. The insulating structure includes a region made of an insulating material and a complementary region made of a semiconductor material.

Abstract translation: 形成在衬底中的双向开关包括反并联连接的第一和第二主垂直晶闸管。 第三辅助垂直晶闸管具有与第一晶闸管的后表面层共同的后表面层。 周边区域围绕晶闸管并且将后表面层连接到位于基板另一侧上的与第三晶闸管相同的导电类型的层。 金属化连接第一和第二晶闸管的后表面。 绝缘结构位于第三晶闸管的后表面层与金属化之间。 绝缘结构在第一晶闸管的外围延伸。 绝缘结构包括由绝缘材料制成的区域和由半导体材料制成的互补区域。

公开(公告)号：US09722061B2

公开(公告)日：2017-08-01

申请号：US14731563

申请日：2015-06-05

Applicant: STMicroelectronics (Tours) SAS

Inventor： Samuel Menard ,  Dalaf Ali

IPC: H01L29/66 ,  H01L29/747 ,  H01L29/06

CPC classification number: H01L29/747 ,  H01L29/0638

Abstract: A bidirectional switch is formed in a semiconductor substrate of a first conductivity type. The switch includes first and second thyristors connected in antiparallel extending vertically between front and rear surfaces of the substrate. A vertical peripheral wall of the second conductivity type connects the front surface to the rear surface and surrounds the thyristors. On the front surface, in a ring-shaped region of the substrate separating the vertical peripheral wall from the thyristors, a first region of the first conductivity type is provided having a doping level greater than the substrate and having the shape of a ring-shaped band portion partially surrounding the first thyristor and stopping at the level of the adjacent region between the first and second thyristors.

公开(公告)号：US20160027907A1

公开(公告)日：2016-01-28

申请号：US14731563

申请日：2015-06-05

Applicant: STMicroelectronics (Tours) SAS

Inventor： Samuel Menard ,  Dalaf Ali

IPC: H01L29/747

CPC classification number: H01L29/747 ,  H01L29/0638

Abstract: A bidirectional switch is formed in a semiconductor substrate of a first conductivity type. The switch includes first and second thyristors connected in antiparallel extending vertically between front and rear surfaces of the substrate. A vertical peripheral wall of the second conductivity type connects the front surface to the rear surface and surrounds the thyristors. On the front surface, in a ring-shaped region of the substrate separating the vertical peripheral wall from the thyristors, a first region of the first conductivity type is provided having a doping level greater than the substrate and having the shape of a ring-shaped band portion partially surrounding the first thyristor and stopping at the level of the adjacent region between the first and second thyristors.

Abstract translation: 在第一导电类型的半导体衬底中形成双向开关。 该开关包括第一和第二晶闸管，其在基板的前表面和后表面之间垂直地反向平行地延伸。 第二导电类型的垂直周壁将前表面连接到后表面并围绕晶闸管。 在前表面上，在将垂直周壁与晶闸管分离的衬底的环形区域中，提供第一导电类型的第一区域，其具有大于衬底的掺杂水平，并且具有环形形状 带部分部分地围绕第一晶闸管并且在第一和第二晶闸管之间的相邻区域的水平处停止。