公开(公告)号：US11798981B2

公开(公告)日：2023-10-24

申请号：US17346771

申请日：2021-06-14

Applicant: STMicroelectronics S.r.l.

Inventor： Mario Giuseppe Saggio ,  Angelo Magri' ,  Edoardo Zanetti ,  Alfio Guarnera

IPC: H01L29/06 ,  H01L29/16

CPC classification number: H01L29/0607 ,  H01L29/1608

Abstract: An electronic device includes a semiconductor body of silicon carbide, and a body region at a first surface of the semiconductor body. A source region is disposed in the body region. A drain region is disposed at a second surface of the semiconductor body. A doped region extends seamlessly at the entire first surface of the semiconductor body and includes one or more first sub-regions having a first doping concentration and one or more second sub-regions having a second doping concentration lower than the first doping concentration. Thus, the device has zones alternated to each other having different conduction threshold voltage and different saturation current.

公开(公告)号：US11728422B2

公开(公告)日：2023-08-15

申请号：US17096697

申请日：2020-11-12

Applicant: STMicroelectronics S.r.l.

Inventor： Angelo Magri' ,  Stefania Fortuna

IPC: H01L29/78 ,  H01L21/265 ,  H01L21/765 ,  H01L29/06 ,  H01L29/10 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/7813 ,  H01L21/26513 ,  H01L21/765 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/66734

Abstract: A power MOSFET device includes an active area accommodating a first body region and a second body region having a first and, respectively, a second conductivity value. The second value is higher than the first value. A first channel region is disposed in the first body region between a first source region and a drain region, and the first channel region has and having a first channel length. A second channel region is disposed in the second body region between a second source region and the drain region, and the second channel region has and having a second channel length smaller than the first channel length. A first device portion, having a first threshold voltage, includes the first channel region, and a second device portion, having a second threshold voltage higher than the first threshold voltage, includes the second channel region.

公开(公告)号：US09627472B2

公开(公告)日：2017-04-18

申请号：US14824813

申请日：2015-08-12

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Mario Giuseppe Saggio ,  Domenico Murabito ,  Angelo Magri'

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/78 ,  H01L29/08 ,  H01L29/739 ,  H01L29/10 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/0634 ,  H01L27/088 ,  H01L29/0649 ,  H01L29/086 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7811

Abstract: An embodiment of a structure for a high voltage device of the type which comprises at least a semiconductor substrate being covered by an epitaxial layer of a first type of conductivity, wherein a plurality of column structures are realized, which column structures comprises high aspect ratio deep trenches, said epitaxial layer being in turn covered by an active surface area wherein said high voltage device is realized, each of the column structures comprising at least an external portion being in turn realized by a silicon epitaxial layer of a second type of conductivity, opposed than said first type of conductivity and having a dopant charge which counterbalances the dopant charge being in said epitaxial layer outside said column structures, as well as a dielectric filling portion which is realized inside said external portion in order to completely fill said deep trench.