公开(公告)号：US20180118561A1

公开(公告)日：2018-05-03

申请号：US15863051

申请日：2018-01-05

Applicant: STMicroelectronics S.r.l.

Inventor： Ernesto LASALANDRA ,  Angelo MERASSI ,  Sarah Zerbini

IPC: B81C1/00 ,  G01C19/5755 ,  B81B3/00 ,  H03H9/02 ,  G01P15/18 ,  G01P15/125 ,  G01P1/00 ,  G01C19/56 ,  G01P15/08

CPC classification number: B81C1/0069 ,  B81B3/0081 ,  B81B2201/025 ,  B81C1/00158 ,  B81C1/00666 ,  G01C19/56 ,  G01C19/5755 ,  G01P1/006 ,  G01P15/125 ,  G01P15/18 ,  G01P2015/0814 ,  H03H9/02448 ,  H03H2009/02496 ,  Y10T29/43

Abstract: A micro-electromechanical device includes a semiconductor substrate, in which a first microstructure and a second microstructure of reference are integrated. The first microstructure and the second microstructure are arranged in the substrate so as to undergo equal strains as a result of thermal expansions of the substrate. Furthermore, the first microstructure is provided with movable parts and fixed parts with respect to the substrate, while the second microstructure has a shape that is substantially symmetrical to the first microstructure but is fixed with respect to the substrate. By subtracting the changes in electrical characteristics of the second microstructure from those of the first, variations in electrical characteristics of the first microstructure caused by changes in thermal expansion or contraction can be compensated for.