-
1.发明申请公开(公告)号：US20220306515A1
公开(公告)日：2022-09-29
申请号：US17697124
申请日：2022-03-17
Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor： Takahiro SAITO , Sotaro IDA , Hiroki INOUE
IPC: C03B37/014
Abstract: A method for manufacturing an optical fiber preform includes a deposition step and an introduction step. In the deposition step, glass fine particles are generated from a glass raw material gas in a flame obtained by burning a flammable gas supplied to a burner, and the glass fine particles are deposited to produce a hollow porous glass preform. In the introduction step, a first gas is introduced into an inside of a hollow of the porous glass preform, and a second gas is introduced to an outside of the porous glass preform. In the method, at least one of the first gas and the second gas is a gas containing halogen. In the gas introduction step, the gas containing halogen is introduced so that a first partial pressure of the first gas and a second partial pressure of the second gas are different from each other.
-
公开(公告)号：US20130327265A1
公开(公告)日：2013-12-12
申请号：US13862540
申请日：2013-04-15
Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor： Hiroki INOUE , Makoto SASAKI , Shinsuke FUJIWARA
IPC: C30B23/02
Abstract: There is provided a method for producing a silicon carbide crystal, including the steps of: preparing a mixture by mixing silicon small pieces and carbon powders with each other; preparing a silicon carbide powder precursor by heating the mixture to not less than 2000° C. and not more than 2500° C.; preparing silicon carbide powders by pulverizing the silicon carbide powder precursor; and growing a silicon carbide crystal on a seed crystal using the silicon carbide powders in accordance with a sublimation-recrystallization method, 50% or more of the silicon carbide powders used in the step of growing the silicon carbide crystal having a polytype of 6H.
Abstract translation: 提供了一种生产碳化硅晶体的方法，包括以下步骤：通过将硅小块和碳粉彼此混合来制备混合物; 通过将混合物加热至不低于2000℃且不超过2500℃来制备碳化硅粉末前体; 通过粉碎碳化硅粉末前体制备碳化硅粉末; 并使用根据升华重结晶法的碳化硅粉末在晶种上生长碳化硅晶体，在生长具有6H型聚合物的碳化硅晶体的步骤中使用的50％以上的碳化硅粉末。
-
Patent Agency Ranking
公开(公告)号：US20230286851A1
公开(公告)日：2023-09-14
申请号：US18117646
申请日：2023-03-06
Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor： Takahiro SAITO , Hiroki INOUE , Keisei MORITA
IPC: C03B37/014 , C03B37/012
CPC classification number: C03B37/01446 , C03B37/01211
Abstract: A method for manufacturing an optical fiber preform includes generating glass particles from a glass raw material gas in a flame obtained by combustion of a combustible gas supplied to a burner and depositing the glass particles on an outer circumference of a silica glass pipe to form a hollow porous glass preform, inserting a rod into the silica glass pipe, transparently vitrifying the porous glass preform by heating the porous glass preform after inserting the rod to obtain a transparent glass preform, drawing out the rod from the silica glass pipe after the porous glass preform is transparently vitrified, and removing the silica glass pipe from the transparent glass preform by etching after drawing out the rod.
-
公开(公告)号：US20130239881A1
公开(公告)日：2013-09-19
申请号：US13753941
申请日：2013-01-30
Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor： Hiroki INOUE , Makoto SASAKI , Shin HARADA , Shinsuke FUJIWARA
IPC: C30B23/02
CPC classification number: C30B23/025 , C30B29/36
Abstract: A method for manufacturing a silicon carbide single-crystal having a diameter of more than 100 mm and a maximum height of 20 mm or more using a sublimation method includes the following steps. That is, there are prepared a seed substrate made of silicon carbide and a silicon carbide source material. By sublimating the silicon carbide source material, the silicon carbide single-crystal is grown on a growth surface of the seed substrate. In the step of growing the silicon carbide single-crystal, a first carbon member provided at a position facing a side wall of the seed substrate is etched at a rate of 0.1 mm/hour or less. By suppressing a change in growth condition for the silicon carbide single-crystal in the crucible, there can be provided a method for manufacturing a silicon carbide single-crystal so as to stably grow the silicon carbide single-crystal.
Abstract translation: 使用升华法制造直径大于100mm，最大高度为20mm以上的碳化硅单晶的方法包括以下步骤。 也就是说，准备了由碳化硅和碳化硅源材料制成的种子基底。 通过升华碳化硅源材料，碳化硅单晶生长在种子基底的生长表面上。 在生长碳化硅单晶的步骤中，以0.1mm /小时以下的速度蚀刻设置在面向种子基板的侧壁的位置的第一碳构件。 通过抑制坩埚中的碳化硅单晶的生长条件的变化，可以提供一种制造碳化硅单晶的方法，以便稳定地生长碳化硅单晶。
-
5.发明申请公开(公告)号：US20180140983A1
公开(公告)日：2018-05-24
申请号：US15305816
申请日：2015-06-16
Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor： Satoshi YAHAGI , Shinichi KANAZAWA , Munetsugu UEYAMA , Hiroki INOUE
CPC classification number: B01D39/1692 , B01D33/06 , B01D39/083 , B01D39/16 , B01D2201/127 , B63B13/00 , C02F1/004 , C02F1/32 , C02F2103/08 , C02F2201/006
Abstract: A pleated filter cartridge includes a pleated filter that includes a filter base having folds that repeatedly form mountains and valleys and having a tubular shape whose axial direction is a ridge line direction of the folds, and fixing members disposed on an upper bottom portion and a lower bottom portion of the pleated filter. The pleated filter includes a reinforcing structure for folds in the mountains which are projecting portions projecting toward the outside of the tubular shape. The reinforcing structure includes both a resin-reinforcing structure including, as a reinforcing body, a resin that covers a surface of the base in the folds or a resin that is allowed to permeate in the base in the folds, and a member-reinforcing structure in which reinforcing members provided separately from the filter base are disposed so as to extend along the folds.
-
公开(公告)号：US20130255568A1
公开(公告)日：2013-10-03
申请号：US13780127
申请日：2013-02-28
Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor： Hiroki INOUE , Makoto SASAKI , Shin HARADA , Eiryo TAKASUKA , Shinsuke FUJIWARA
CPC classification number: C30B23/066 , C30B23/025 , C30B29/36
Abstract: A method for manufacturing silicon carbide single crystal having a diameter larger than 100 mm by sublimation includes the following steps. A seed substrate made of silicon carbide and silicon carbide raw material are prepared. Silicon carbide single crystal is grown on the growth face of the seed substrate by sublimating the silicon carbide raw material. In the step of growing silicon carbide single crystal, the maximum growing rate of the silicon carbide single crystal growing on the growth face of the seed substrate is greater than the maximum growing rate of the silicon carbide crystal growing on the surface of the silicon carbide raw material. Thus, there can be provided a method for manufacturing silicon carbide single crystal allowing a thick silicon carbide single crystal film to be obtained, when silicon carbide single crystal having a diameter larger than 100 mm is grown.
Abstract translation: 通过升华制造直径大于100mm的碳化硅单晶的方法包括以下步骤。 制备由碳化硅和碳化硅原料制成的种籽基材。 碳化硅单晶通过使碳化硅原料升华而在种底基材的生长面上生长。 在生长碳化硅单晶的步骤中，生长在种子基底的生长面上的碳化硅单晶的最大生长速率大于在碳化硅原料的表面上生长的碳化硅晶体的最大生长速率 材料。 因此，当生产直径大于100mm的碳化硅单晶时，可以提供制造碳化硅单晶的方法，以获得厚的碳化硅单晶膜。
-
公开(公告)号：US20230331618A1
公开(公告)日：2023-10-19
申请号：US18028602
申请日：2021-09-27
Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor： Takahiro SAITO , Keisei MORITA , Hiroki INOUE
IPC: C03B37/014
CPC classification number: C03B37/01406 , C03B2207/42 , C03B2207/50
Abstract: A method for manufacturing an optical fiber preform includes a core part deposition process and a clad part deposition process. The number of burners used in the core part deposition process is less than the number of burners used in the clad part deposition process. A distance between turning back points in a first reciprocating motion for the core deposition process is equal to or greater than a length of an effective portion of the optical fiber preform. At least three burners are used in the clad part deposition process. A distance between turning back points in a second reciprocating motion for the clad part deposition process is shorter than a distance between turning back points in the first reciprocating motion. The turning back points in the second reciprocating motion vary during the clad part deposition process.
-
-
-
-
-
-
Search Results
7
records
(took 0.02 seconds)
