DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20250089475A1

    公开(公告)日:2025-03-13

    申请号:US18635753

    申请日:2024-04-15

    Abstract: A display device includes a substrate, a first transistor including a first active layer disposed on the substrate and a first gate electrode disposed on the first active layer, and a first gate insulating layer disposed between the first active layer and the first gate electrode. The first active layer includes an oxide semiconductor containing indium (In) at a content range of about 40 at % to about 54 at %, and the first gate insulating layer has an emission amount range of oxygen (O2) of about 2.48E+19 Molec./cm3 to about 2.76E+19 Molec./cm3, or an emission amount range of nitrogen monoxide (NO) of about 1.04E+20 Molec./cm3 to about 1.15E+20 Molec./cm3 under heat treatment conditions performed at a temperature range of about 50° C. to about 550° C.

    GATE DRIVER AND DISPLAY DEVICE INCLUDING THE SAME

    公开(公告)号:US20250078767A1

    公开(公告)日:2025-03-06

    申请号:US18598522

    申请日:2024-03-07

    Abstract: A gate driver according to embodiments of the present inventive concept includes a plurality of stages arranged in a first direction to output scan signals, clock signal lines supplying clock signals to the stages, power source signal lines supplying power sources to the stages, a start signal line that does not intersect the clock signal lines and the power source signal lines and supplies a start signal to a first stage among the stages, and an end signal line that does not intersect the clock signal lines, the power source signal lines, and the start signal line and supplies an end signal to a last stage among the stages.

    DISPLAY DEVICE
    3.
    发明公开
    DISPLAY DEVICE 审中-公开

    公开(公告)号:US20240063356A1

    公开(公告)日:2024-02-22

    申请号:US18342567

    申请日:2023-06-27

    CPC classification number: H01L33/62 H01L25/167

    Abstract: A display device includes: a first electrode and a second electrode spaced from the first electrode; a first insulating layer on the first electrode and the second electrode; a plurality of light emitting elements on the first insulating layer and on the first electrode and the second electrode; a first connection electrode on the first electrode and contacting the plurality of light emitting elements; and a second connection electrode on the second electrode and contacting the plurality of light emitting elements, wherein each of the first electrode and the second electrode includes a first metal layer and a second metal layer on the first metal layer and including a different material from the first metal layer, a thickness of the first metal layer is between 100 Å to 300 Å, and a thickness of each of the first electrode and the second electrode is 2600 Å or less.

    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20210327910A1

    公开(公告)日:2021-10-21

    申请号:US17157184

    申请日:2021-01-25

    Abstract: A display device may include a first gate electrode disposed on a substrate, a buffer layer disposed on the first gate electrode, a first active pattern on the buffer layer, the first active pattern overlapping the first gate electrode and including an oxide semiconductor, a second active pattern on the buffer layer, spaced apart from the first active pattern, and including an oxide semiconductor, the second active pattern including a channel region, and a source region and a drain region, a source pattern and a drain pattern respectively at ends of the first active pattern, a first insulation pattern disposed on the first active pattern, a second insulation pattern disposed on the channel region, a first oxygen supply pattern on the first insulation pattern, a second oxygen supply pattern on the second insulation pattern, and a second gate electrode on the second oxygen supply pattern.

    THIN FILM TRANSISTOR AND TRANSISTOR ARRAY SUBSTRATE

    公开(公告)号:US20240405025A1

    公开(公告)日:2024-12-05

    申请号:US18523961

    申请日:2023-11-30

    Abstract: There is provided a thin film transistor comprises a substrate; a semiconductor layer disposed on the substrate and including a channel area, a first conductive area connected to one side of the channel area, and a second conductive area connected to the other side of the channel area; a gate insulating layer covering areas other than the first conductive area and the second conductive area in the semiconductor layer; a gate electrode disposed on the gate insulating layer and overlapping the channel area in a plan view; and a first electrode disposed on the gate insulating layer on the one side of the channel area and in contact with a portion of the first conductive area. A first edge of the first electrode facing the gate electrode obliquely intersects a first edge of the gate insulating layer in a plan view.

    DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20240030235A1

    公开(公告)日:2024-01-25

    申请号:US18480494

    申请日:2023-10-03

    CPC classification number: H01L27/124 H01L27/1288 H01L33/62 H01L2933/0066

    Abstract: A display device according to an embodiment of the present disclosure includes: a substrate; a first conductive layer on the substrate; a first insulating layer on the first conductive layer; an active pattern on the first insulating layer and including a semiconductor material; a second insulating layer on the active pattern; and a second conductive layer on the second insulating layer, wherein the first insulating layer has a first opening exposing the first conductive layer, the second insulating layer has a second opening exposing the first conductive layer, a breadth of the first opening is different than a breadth of the second opening, and a side surface of the first opening and a side surface of the second opening are formed to a top surface of the first conductive layer.

    DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20210249443A1

    公开(公告)日:2021-08-12

    申请号:US17109601

    申请日:2020-12-02

    Abstract: A display device includes: a substrate; a first conductive layer on the substrate and comprising a first signal line; an insulating layer pattern on the first conductive layer; a semiconductor pattern on the insulating layer pattern; a gate insulating layer on the semiconductor pattern; and a second conductive layer comprising a gate electrode on the gate insulting layer and a first source/drain electrode and a second source/drain electrode, each on at least a part of the semiconductor pattern, wherein the insulating layer pattern and the semiconductor pattern have a same planar shape, the semiconductor pattern comprises a channel region overlapping the gate electrode, a first source/drain region on a first side of the channel region and a second source/drain region on a second side of the channel region, and the first source/drain electrode electrically connects the first source/drain region and the first signal line.

    DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20210225878A1

    公开(公告)日:2021-07-22

    申请号:US17085976

    申请日:2020-10-30

    Abstract: A display device according to an embodiment of the present disclosure includes: a substrate; a first conductive layer on the substrate; a first insulating layer on the first conductive layer; an active pattern on the first insulating layer and including a semiconductor material; a second insulating layer on the active pattern; and a second conductive layer on the second insulating layer, wherein the first insulating layer has a first opening exposing the first conductive layer, the second insulating layer has a second opening exposing the first conductive layer, a breadth of the first opening is different than a breadth of the second opening, and a side surface of the first opening and a side surface of the second opening are formed to a top surface of the first conductive layer.

    DISPLAY DEVICE
    9.
    发明申请

    公开(公告)号:US20210167125A1

    公开(公告)日:2021-06-03

    申请号:US17267783

    申请日:2019-07-23

    Abstract: A display device according to some embodiments includes: a substrate; a first transistor and a second transistor disposed on the substrate and spaced apart from each other; a first electrode connected to one of the first transistor and the second transistor; a second electrode overlapping the first electrode; and a light emitting layer between the first electrode and the second electrode, wherein the first transistor may include: a first semiconductor layer on the substrate; a first gate electrode on the first semiconductor layer; and a first source electrode and a first drain electrode connected to the first semiconductor layer, and the second transistor may include: a second semiconductor layer on the substrate; a second gate electrode on the second semiconductor layer; and a second source electrode and a second drain electrode connected to the second semiconductor layer, and the first gate electrode and the second semiconductor layer may be on the same layer.

Patent Agency Ranking