公开(公告)号：US08975145B2

公开(公告)日：2015-03-10

申请号：US14168971

申请日：2014-01-30

Applicant: Samsung Display Co., Ltd.

Inventor： Yu-Gwang Jeong ,  Young-Wook Lee ,  Sang-Gab Kim ,  Woo-Geun Lee ,  Min-Seok Oh ,  Jang-Soo Kim ,  Kap-Soo Yoon ,  Shin-Il Choi ,  Hong-Kee Chin ,  Seung-Ha Choi ,  Seung-Hwan Shim ,  Sung-Hoon Yang ,  Ki-Hun Jeong

IPC: H01L33/44 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L27/127 ,  H01L27/1214 ,  H01L27/1259 ,  H01L27/1288 ,  H01L29/66765

Abstract: Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.

Abstract translation: 本发明的实施例涉及薄膜晶体管和显示面板的制造方法，包括在基板上形成包括栅电极的栅极线，在栅电极上形成栅绝缘层，在栅电极上形成本征半导体 栅极绝缘层，在本征半导体上形成非本征半导体，在外部半导体上形成包括源电极和漏电极的数据线，以及对源电极和漏极之间的非本征半导体的一部分进行等离子体处理，以形成 保护构件和保护构件的相应侧上的欧姆接触。 因此，可以省略用于蚀刻外部半导体和形成用于保护本征半导体的无机绝缘层的工艺，从而可以简化显示面板的制造工艺，可以降低制造成本，并且可以提高生产率。

公开(公告)号：US09070718B2

公开(公告)日：2015-06-30

申请号：US13900072

申请日：2013-05-22

Applicant: Samsung Display Co., Ltd.

Inventor： Sung-Haeng Cho ,  Ki-Hun Jeong ,  Jun-Ho Song ,  Joo-Han Kim ,  Hyung-Jun Kim ,  Seung-Hwan Shim

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  G02F1/1345

CPC classification number: H01L29/66765 ,  G02F1/13454 ,  H01L27/1229 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/78696

Abstract: A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity.

Abstract translation: 薄膜晶体管，显示装置及其制造方法。 薄膜晶体管包括控制电极，与控制电极重叠的半导体，以及设置在半导体上或其下方并且彼此相对的输入电极和输出电极。 半导体包括设置在输入电极和输出电极之间并具有第一结晶度的第一部分和与第一部分连接的与输入电极或输出电极重叠并具有第二结晶度的第二部分。 第一结晶度高于第二结晶度。

公开(公告)号：US08619230B2

公开(公告)日：2013-12-31

申请号：US13776029

申请日：2013-02-25

Applicant: Samsung Display Co., Ltd.

Inventor： Seung-Hwan Shim ,  Gug-Rae Jo ,  Sung-Hoon Yang ,  Kap-Soo Yoon ,  Ki-Hun Jeong ,  Jae-Ho Choi

IPC: G02F1/1333 ,  G02F1/1345 ,  G02F1/1339

CPC classification number: G02F1/1345 ,  G02F2001/133519

Abstract: An approach is provided for manufacturing a LCD apparatus. A first substrate is formed by forming a transparent conductive layer on a first transparent insulating substrate and forming a transparent conductive electrode on the transparent conductive layer. A second substrate is formed by forming a thin-film transistor (TFT) on a second transparent insulating substrate and forming a pixel electrode. The first substrate is coupled to the second substrate using a sealing member.

Abstract translation: 提供了用于制造LCD装置的方法。 第一衬底通过在第一透明绝缘衬底上形成透明导电层并在透明导电层上形成透明导电电极而形成。 第二衬底通过在第二透明绝缘衬底上形成薄膜晶体管（TFT）并形成像素电极而形成。 使用密封构件将第一衬底耦合到第二衬底。

公开(公告)号：US20130164870A1

公开(公告)日：2013-06-27

申请号：US13776029

申请日：2013-02-25

Applicant: Samsung Display Co., Ltd.

Inventor： Seung-Hwan Shim ,  Gug-Rae Jo ,  Sung-Hoon Yang ,  Kap-Soo Yoon ,  Ki-Hun Jeong ,  Jae-Ho Choi

IPC: G02F1/1343

CPC classification number: G02F1/1345 ,  G02F2001/133519

Abstract: An approach is provided for manufacturing a LCD apparatus. A first substrate is formed by forming a transparent conductive layer on a first transparent insulating substrate and forming a transparent conductive electrode on the transparent conductive layer. A second substrate is formed by forming a thin-film transistor (TFT) on a second transparent insulating substrate and forming a pixel electrode. The first substrate is coupled to the second substrate using a sealing member.

Abstract translation: 提供了用于制造LCD装置的方法。 第一衬底通过在第一透明绝缘衬底上形成透明导电层并在透明导电层上形成透明导电电极而形成。 第二衬底通过在第二透明绝缘衬底上形成薄膜晶体管（TFT）并形成像素电极而形成。 使用密封构件将第一衬底耦合到第二衬底。