公开(公告)号：US20240347537A1

公开(公告)日：2024-10-17

申请号：US18363637

申请日：2023-08-01

申请人： Samsung Electronics Co., Ltd.

发明人： Mehdi Saremi ,  Aravindh Kumar ,  Ming He ,  Muhammed Ahosan Ul Karim ,  Rebecca Park ,  Harsono Simka

IPC分类号： H01L27/092 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/08

CPC分类号： H01L27/0922 ,  H01L21/02532 ,  H01L21/823807 ,  H01L29/0865 ,  H01L29/0882

摘要： A method for manufacturing a semiconductor device according to one or more embodiments may include growing a first epitaxy layer at a first side and a second side of a stack of gates and channels, applying a sacrificial layer on the first epitaxy layer, growing a second epitaxy layer on the sacrificial layer, removing the sacrificial layer, and depositing a metal layer on the first epitaxy layer and the second epitaxy layer at the first side of the stack of gates and channels.