公开(公告)号：US12169678B2

公开(公告)日：2024-12-17

申请号：US17510652

申请日：2021-10-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Useong Kim ,  Bayram Yenikaya ,  Mindy Lee ,  Xin Zhou ,  Hee-Jun Lee ,  Woo-Yong Cho

IPC: G06F30/398 ,  G06V10/44 ,  G06V10/88

Abstract: Disclosed is an operating method of an electronic device for manufacture of a semiconductor device. The operating method includes receiving a layout image of the semiconductor device, generating an intermediate image by generating assist features based on main features of the layout image, evaluating a process result by performing simulation based on the intermediate image, and correcting the intermediate image by correcting shapes of the main features and/or the assist features of the intermediate image based on the process result.

公开(公告)号：US20240362395A1

公开(公告)日：2024-10-31

申请号：US18394330

申请日：2023-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yangwoo Heo ,  Bayram Yenikaya ,  Xin Li ,  Sangwook Kim

IPC: G06F30/398 ,  G03F1/36

CPC classification number: G06F30/398 ,  G03F1/36

Abstract: A layout correction method for a semiconductor device includes receiving a design layout including at least a target layer and a reference layer, detecting target edges including target patterns in the target layer, and detecting reference edges including reference patterns in the reference layer, determining a dissection point in a section intersecting a space between reference patterns on a target edge having three or more intersecting reference edges, generating segments by dissecting the target edges based on dissection points set for the target edges, setting an evaluation point at an intermediate point of a section intersecting a reference pattern in a segment intersecting the reference pattern, among the segments, determining a movement amount of segments having evaluation points set on the segments by inputting a feature measured at the evaluation points to a layout correction model, and generating a corrected layout by moving the segments based on the movement amount.

公开(公告)号：US20240280891A1

公开(公告)日：2024-08-22

申请号：US18111785

申请日：2023-02-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heejun Lee ,  Wooyong Cho ,  Bayram Yenikaya ,  Joobyoung Kim ,  Useong Kim

IPC: G03F1/36 ,  G03F1/84

CPC classification number: G03F1/36 ,  G03F1/84

Abstract: Provided are an optical proximity correction (OPC) method capable of addressing the limitations of patterning and improving the reliability of patterning, and a mask manufacturing method using the OPC method. In the OPC method, a rectangular mask layout for a target pattern is created, the edge of the rectangular mask layout is dissected into segments, a first shape variable point is created, and a second shape variable point is created by shifting the first shape variable point on a rounded target pattern. Thereafter, a curvilinear mask layout is created based on the second shape variable point, a contour is extracted based on the curvilinear mask layout, an edge placement error (EPE) is determined, and the operations are repeated according to a predetermined criterion, thereby realizing a mask layout with minimal EPEs.