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    SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
    4.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20140084384A1

    公开(公告)日：2014-03-27

    申请号：US14028912

    申请日：2013-09-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jongwan CHOI ,  Bo-Young LEE ,  Myoungbum LEE

    IPC: H01L29/06

    CPC classification number: H01L29/0649 ,  H01L21/764 ,  H01L27/11529

    Abstract: A semiconductor device includes a plurality of gate structures on a substrate, the plurality of gate structures including a gate metal pattern and delimiting air gaps formed therebetween, an insulating layer on the plurality of gate structures, and a porous insulating layer between the plurality of gate structures and the insulating layer, the porous insulating layer configured to cross the plurality of gate structures to delimit the air gaps.

    Abstract translation: 半导体器件包括在衬底上的多个栅极结构，所述多个栅极结构包括栅极金属图案和形成在其间的限定气隙，多个栅极结构上的绝缘层和多个栅极之间的多孔绝缘层 结构和绝缘层，所述多孔绝缘层被配置成跨越所述多个栅极结构以限定所述气隙。

    DUMMY CELL ARRAY FOR FIN FIELD-EFFECT TRANSISTOR DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING THE DUMMY CELL ARRAY
    6.
    发明申请
    DUMMY CELL ARRAY FOR FIN FIELD-EFFECT TRANSISTOR DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING THE DUMMY CELL ARRAY 有权
    用于熔融场效应晶体管器件和半导体集成电路的DUMMY CELL阵列，包括DUMMY CELL ARRAY

    公开(公告)号：US20150084129A1

    公开(公告)日：2015-03-26

    申请号：US14487702

    申请日：2014-09-16

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ji-Myoung LEE ,  Young-Soo SONG ,  Jun-Min LEE ,  Bo-Young LEE

    IPC: H01L27/02 ,  H01L27/12 ,  H01L27/088

    CPC classification number: H01L27/0207 ,  H01L21/823431 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/6681

    Abstract: A semiconductor device includes a substrate; a device area of the substrate, the device area including a plurality of device unit cells; and a dummy cell array arranged around the device area. The dummy cell array includes a plurality of dummy unit cells repeatedly arranged in a first direction and a second direction perpendicular to the first direction, each of the dummy cell unit having a structure corresponding to a device unit cell. The device unit cell includes at least a first transistor in the device area. The structure of the dummy unit cell includes an active area and a gate line. For each dummy unit cell, the active area and the gate line extend beyond a cell boundary that defines the dummy unit cell.

    Abstract translation: 半导体器件包括衬底; 所述衬底的器件区域，所述器件区域包括多个器件单元电池; 以及布置在设备区域周围的虚拟单元阵列。 虚设单元阵列包括沿第一方向重复地排列的多个虚拟单位单元和垂直于第一方向的第二方向，虚拟单元单元具有对应于器件单位单元的结构。 器件单元电池在器件区域中至少包括第一晶体管。 虚拟单元的结构包括有源区和栅极线。 对于每个虚拟单元，有源区和栅极线延伸超过限定虚拟单元的单元边界。

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