公开(公告)号：US20190074179A1

公开(公告)日：2019-03-07

申请号：US16120728

申请日：2018-09-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-jin PARK ,  Bong-soo KIM ,  Jin-bum KIM ,  Yoo-sang HWANG

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24 ,  H01L29/423 ,  H01L29/78 ,  H01L29/06

Abstract: A method of fabricating a device including a two-dimensional (2D) material includes forming an amorphous transition metal oxide structure on a substrate and replacing the amorphous transition metal oxide structure by a transition metal dichalcogenide structure. The transition metal dichalcogenide structure includes atomic layers, that are substantially parallel to a surface of the transition metal dichalcogenide structure.

公开(公告)号：US20190355813A1

公开(公告)日：2019-11-21

申请号：US16217285

申请日：2018-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-myeong JANG ,  Jun-hyeok AHN ,  Bong-soo KIM ,  Hyo-bin PARK ,  Myoung-seob SHIM

IPC: H01L29/06 ,  H01L29/51 ,  H01L21/762

Abstract: Provided are semiconductor devices including device isolation layers. The semiconductor device includes a substrate having a cell region and a core/peripheral region, a first active region in the cell region of the substrate, a first device isolation layer that defines the first active region, a second active region in the core/peripheral region of the substrate; and a second device isolation layer that defines the second active region. A height from a lower surface of the substrate to an upper end of the first device isolation layer in a first direction that is perpendicular to the lower surface of the substrate is less than or equal to a height from the lower surface of the substrate to an upper end of the first active region in the first direction.