公开(公告)号：US10276564B2

公开(公告)日：2019-04-30

申请号：US15489093

申请日：2017-04-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mirco Cantoro ,  Yeon Cheol Heo ,  Byoung Gi Kim ,  Chang Min Yoe ,  Seung Chan Yun ,  Dong Hun Lee ,  Yun Il Lee ,  Hyung Suk Lee

IPC: H01L27/088 ,  H01L29/786 ,  H01L29/06 ,  H01L23/50 ,  H01L21/8234 ,  H01L29/423 ,  B82Y10/00 ,  H01L29/40 ,  H01L29/66 ,  H01L29/775

Abstract: A semiconductor device includes a substrate having a first region and a second region; a first nanowire in the first region in a direction perpendicular to an upper surface of the substrate; a second nanowire in the second region in a direction perpendicular to the upper surface of the substrate and having a height less than that of the first nanowire; first source/drain regions at top portion and bottom portion of the first nanowire; second source/drain regions at top portion and bottom portion of the second nanowire; a first gate electrode surrounding the first nanowire between the first source/drain regions; and a second gate electrode surrounding the second nanowire between the second source/drain regions.