公开(公告)号：US20240055432A1

公开(公告)日：2024-02-15

申请号：US18477290

申请日：2023-09-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joong Gun Oh ,  Sung Il Park ,  Jae Hyun Park ,  Hyung Suk Lee ,  Eun Sil Park ,  Yun Il Lee

IPC: H01L27/092 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L21/8238 ,  H01L21/308 ,  H01L29/423 ,  H01L21/768

CPC classification number: H01L27/0924 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7851 ,  H01L29/0642 ,  H01L29/6656 ,  H01L29/0847 ,  H01L21/823821 ,  H01L21/823878 ,  H01L21/823871 ,  H01L21/3086 ,  H01L29/42356 ,  H01L21/76895

Abstract: A semiconductor device includes a fin type pattern extending in a first direction on a substrate, a first gate electrode extending in a second direction intersecting the first direction on the fin type pattern, a source/drain region on a side wall of the first gate electrode and in the fin type pattern, a separation structure extending in the first direction on the substrate, the separation structure including a first trench and being spaced apart from the fin type pattern and separating the first gate electrode, an interlayer insulating layer on a side wall of the separation structure and covering the source/drain region, the interlayer insulating layer including a second trench having a lower surface lower than a lower surface of the first trench, and a contact connected to the source/drain region and filling the first trench and the second trench.

公开(公告)号：US12279458B2

公开(公告)日：2025-04-15

申请号：US18477290

申请日：2023-09-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joong Gun Oh ,  Sung Il Park ,  Jae Hyun Park ,  Hyung Suk Lee ,  Eun Sil Park ,  Yun Il Lee

IPC: H01L27/092 ,  H01L21/308 ,  H01L21/768 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H10D30/01 ,  H10D30/62 ,  H10D62/10 ,  H10D62/13 ,  H10D64/01 ,  H10D64/27 ,  H10D84/01 ,  H10D84/03 ,  H10D84/85 ,  H01L21/8238

Abstract: A semiconductor device includes a fin type pattern extending in a first direction on a substrate, a first gate electrode extending in a second direction intersecting the first direction on the fin type pattern, a source/drain region on a side wall of the first gate electrode and in the fin type pattern, a separation structure extending in the first direction on the substrate, the separation structure including a first trench and being spaced apart from the fin type pattern and separating the first gate electrode, an interlayer insulating layer on a side wall of the separation structure and covering the source/drain region, the interlayer insulating layer including a second trench having a lower surface lower than a lower surface of the first trench, and a contact connected to the source/drain region and filling the first trench and the second trench.

公开(公告)号：US10276564B2

公开(公告)日：2019-04-30

申请号：US15489093

申请日：2017-04-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mirco Cantoro ,  Yeon Cheol Heo ,  Byoung Gi Kim ,  Chang Min Yoe ,  Seung Chan Yun ,  Dong Hun Lee ,  Yun Il Lee ,  Hyung Suk Lee

IPC: H01L27/088 ,  H01L29/786 ,  H01L29/06 ,  H01L23/50 ,  H01L21/8234 ,  H01L29/423 ,  B82Y10/00 ,  H01L29/40 ,  H01L29/66 ,  H01L29/775

Abstract: A semiconductor device includes a substrate having a first region and a second region; a first nanowire in the first region in a direction perpendicular to an upper surface of the substrate; a second nanowire in the second region in a direction perpendicular to the upper surface of the substrate and having a height less than that of the first nanowire; first source/drain regions at top portion and bottom portion of the first nanowire; second source/drain regions at top portion and bottom portion of the second nanowire; a first gate electrode surrounding the first nanowire between the first source/drain regions; and a second gate electrode surrounding the second nanowire between the second source/drain regions.

公开(公告)号：US11804490B2

公开(公告)日：2023-10-31

申请号：US17533212

申请日：2021-11-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joong Gun Oh ,  Sung Il Park ,  Jae Hyun Park ,  Hyung Suk Lee ,  Eun Sil Park ,  Yun Il Lee

IPC: H01L27/092 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L21/308 ,  H01L29/423 ,  H01L21/768

CPC classification number: H01L27/0924 ,  H01L21/3086 ,  H01L21/76895 ,  H01L21/823821 ,  H01L21/823871 ,  H01L21/823878 ,  H01L29/0642 ,  H01L29/0847 ,  H01L29/42356 ,  H01L29/6656 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7851

Abstract: A semiconductor device includes a fin type pattern extending in a first direction on a substrate, a first gate electrode extending in a second direction intersecting the first direction on the fin type pattern, a source/drain region on a side wall of the first gate electrode and in the fin type pattern, a separation structure extending in the first direction on the substrate, the separation structure including a first trench and being spaced apart from the fin type pattern and separating the first gate electrode, an interlayer insulating layer on a side wall of the separation structure and covering the source/drain region, the interlayer insulating layer including a second trench having a lower surface lower than a lower surface of the first trench, and a contact connected to the source/drain region and filling the first trench and the second trench.

公开(公告)号：US11195833B2

公开(公告)日：2021-12-07

申请号：US16218796

申请日：2018-12-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joong Gun Oh ,  Sung Il Park ,  Jae Hyun Park ,  Hyung Suk Lee ,  Eun Sil Park ,  Yun Il Lee

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L21/308 ,  H01L29/423 ,  H01L21/768

Abstract: A semiconductor device includes a fin type pattern extending in a first direction on a substrate, a first gate electrode extending in a second direction intersecting the first direction on the fin type pattern, a source/drain region on a side wall of the first gate electrode and in the fin type pattern, a separation structure extending in the first direction on the substrate, the separation structure including a first trench and being spaced apart from the fin type pattern and separating the first gate electrode, an interlayer insulating layer on a side wall of the separation structure and covering the source/drain region, the interlayer insulating layer including a second trench having a lower surface lower than a lower surface of the first trench, and a contact connected to the source/drain region and filling the first trench and the second trench.

公开(公告)号：US10727354B2

公开(公告)日：2020-07-28

申请号：US15944175

申请日：2018-04-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Il Park ,  Jung Gun You ,  Dong Hun Lee ,  Yun Il Lee

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/06 ,  H01L29/66 ,  H01L29/49 ,  H01L29/423 ,  H01L29/08

Abstract: A semiconductor device includes a substrate; a vertical channel structure including a pair of active fins extended in a first direction, perpendicular to an upper surface of the substrate, and an insulating portion interposed between the pair of active fins; an upper source/drain disposed on the vertical channel structure; a lower source/drain disposed below the vertical channel structure and on the substrate; a gate electrode disposed between the upper source/drain and the lower source/drain and surrounding the vertical channel structure; and a gate dielectric layer disposed between the gate electrode and the vertical channel structure. An interval between the gate electrode and the upper source/drain may be smaller than an interval between the gate electrode and the lower source/drain in the first direction.