公开(公告)号：US20160084901A1

公开(公告)日：2016-03-24

申请号：US14677173

申请日：2015-04-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mi-Ra PARK ,  Dae-Jin SUNG ,  Yu-Sin YANG ,  Na-Kyoung LEE ,  Sang-Kil LEE ,  Chung-Sam JUN ,  Yong-Deok JEONG

IPC: G01R31/265

CPC classification number: G01R31/307 ,  G01R31/2831 ,  H01L22/12 ,  H01L22/14

Abstract: A method of inspecting a resistive defect of a semiconductor device is provided. The method includes loading a semiconductor wafer on a wafer stocker, transferring the semiconductor wafer into a laser anneal module, annealing a portion of the semiconductor wafer using a laser beam in an atmospheric pressure, transferring the annealed semiconductor wafer into an E-beam scanning module in a vacuum, scanning the annealed portions of the semiconductor wafer with an E-beam, and collecting secondary electrons emitted from the annealed portions of the semiconductor wafer.

Abstract translation: 提供了一种检查半导体器件的电阻缺陷的方法。 该方法包括将晶片储存器上的半导体晶片加载，将半导体晶片转移到激光退火模块中，使用大气压力的激光束退火半导体晶片的一部分，将退火的半导体晶片转移到电子束扫描模块 在真空中，用电子束扫描半导体晶片的退火部分，并收集从半导体晶片的退火部分发射的二次电子。