APPARATUS OF INSPECTING RESISTIVE DEFECTS OF SEMICONDUCTOR DEVICES AND INSPECTING METHOD USING THE SAME
    1.
    发明申请
    APPARATUS OF INSPECTING RESISTIVE DEFECTS OF SEMICONDUCTOR DEVICES AND INSPECTING METHOD USING THE SAME 审中-公开
    检查半导体器件的电阻缺陷的装置及其检测方法

    公开(公告)号:US20160084901A1

    公开(公告)日:2016-03-24

    申请号:US14677173

    申请日:2015-04-02

    CPC classification number: G01R31/307 G01R31/2831 H01L22/12 H01L22/14

    Abstract: A method of inspecting a resistive defect of a semiconductor device is provided. The method includes loading a semiconductor wafer on a wafer stocker, transferring the semiconductor wafer into a laser anneal module, annealing a portion of the semiconductor wafer using a laser beam in an atmospheric pressure, transferring the annealed semiconductor wafer into an E-beam scanning module in a vacuum, scanning the annealed portions of the semiconductor wafer with an E-beam, and collecting secondary electrons emitted from the annealed portions of the semiconductor wafer.

    Abstract translation: 提供了一种检查半导体器件的电阻缺陷的方法。 该方法包括将晶片储存器上的半导体晶片加载,将半导体晶片转移到激光退火模块中,使用大气压力的激光束退火半导体晶片的一部分,将退火的半导体晶片转移到电子束扫描模块 在真空中,用电子束扫描半导体晶片的退火部分,并收集从半导体晶片的退火部分发射的二次电子。

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