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    METHOD AND SYSTEM FOR DETECTING DEFECTS
    1.
    发明申请
    METHOD AND SYSTEM FOR DETECTING DEFECTS 审中-公开
    检测缺陷的方法和系统

    公开(公告)号：US20160189369A1

    公开(公告)日：2016-06-30

    申请号：US14967943

    申请日：2015-12-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jae-Ouk JUNG ,  Woo-Seok KO ,  Yu-Sin YANG ,  Sang-Kil LEE ,  Chung-Sam JUN

    IPC: G06T7/00 ,  G02B21/00

    CPC classification number: G06T7/0006 ,  G02B21/0028 ,  G02B21/0056 ,  G02B21/008 ,  G06T7/001 ,  G06T2207/30148

    Abstract: A defect detecting method includes generating an actual image of a pattern on a sample based on irradiation of an electron beam onto the sample, performing a contrast conversion of the actual image to generate a conversion image representing a normal pattern, matching the conversion image and a design image for the pattern, and detecting a defective pattern in the actual image based on matching of the conversion image and the design image. The contrast conversion may be performed for gray levels of pixels in the actual image.

    Abstract translation: 缺陷检测方法包括：基于对样品的电子束的照射，生成样品上的图案的实际图像，对实际图像执行对比度转换，生成表示正常图案的转换图像，匹配转换图像和 基于图像的设计图像，并且基于转换图像和设计图像的匹配来检测实际图像中的缺陷图案。 可以对实际图像中的灰度级像素执行对比度转换。

    APPARATUS OF INSPECTING RESISTIVE DEFECTS OF SEMICONDUCTOR DEVICES AND INSPECTING METHOD USING THE SAME
    2.
    发明申请
    APPARATUS OF INSPECTING RESISTIVE DEFECTS OF SEMICONDUCTOR DEVICES AND INSPECTING METHOD USING THE SAME 审中-公开
    检查半导体器件的电阻缺陷的装置及其检测方法

    公开(公告)号：US20160084901A1

    公开(公告)日：2016-03-24

    申请号：US14677173

    申请日：2015-04-02

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Mi-Ra PARK ,  Dae-Jin SUNG ,  Yu-Sin YANG ,  Na-Kyoung LEE ,  Sang-Kil LEE ,  Chung-Sam JUN ,  Yong-Deok JEONG

    IPC: G01R31/265

    CPC classification number: G01R31/307 ,  G01R31/2831 ,  H01L22/12 ,  H01L22/14

    Abstract: A method of inspecting a resistive defect of a semiconductor device is provided. The method includes loading a semiconductor wafer on a wafer stocker, transferring the semiconductor wafer into a laser anneal module, annealing a portion of the semiconductor wafer using a laser beam in an atmospheric pressure, transferring the annealed semiconductor wafer into an E-beam scanning module in a vacuum, scanning the annealed portions of the semiconductor wafer with an E-beam, and collecting secondary electrons emitted from the annealed portions of the semiconductor wafer.

    Abstract translation: 提供了一种检查半导体器件的电阻缺陷的方法。 该方法包括将晶片储存器上的半导体晶片加载，将半导体晶片转移到激光退火模块中，使用大气压力的激光束退火半导体晶片的一部分，将退火的半导体晶片转移到电子束扫描模块 在真空中，用电子束扫描半导体晶片的退火部分，并收集从半导体晶片的退火部分发射的二次电子。

    APPARATUS FOR MEASURING THICKNESS OF THIN FILM, SYSTEM INCLUDING THE APPARATUS, AND METHOD FOR MEASURING THICKNESS OF THIN FILM
    3.
    发明申请
    APPARATUS FOR MEASURING THICKNESS OF THIN FILM, SYSTEM INCLUDING THE APPARATUS, AND METHOD FOR MEASURING THICKNESS OF THIN FILM 有权
    用于测量薄膜厚度的装置，包括装置的系统和用于测量薄膜厚度的方法

    公开(公告)号：US20160061583A1

    公开(公告)日：2016-03-03

    申请号：US14799107

    申请日：2015-07-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sung-Yoon RYU ,  Sang-Kil LEE ,  Chung-Sam JUN ,  Woo-Seok KO ,  Ho-Jeong KWAK ,  Souk KIM ,  Kwan-Woo RYU ,  Yu-Sin YANG

    IPC: G01B11/06

    CPC classification number: G01B11/0633

    Abstract: An apparatus and a system for measuring the thickness of a thin film are provided. The apparatus includes a signal detector, a Fast Fourier Transform (FFT) generator, an Inverse Fast Fourier Transform (IFFT) generator, and a thickness analyzer. The signal detector detects an electric field signal with respect to a reflected light that is reflected from a thin film. The FFT generator performs FFT with respect to the electric field signal to separate a DC component from an AC component of the electric field signal. The IFFT generator receives the separated AC component of the electric field signal, performs IFFT with respect to the AC component, and extracts a phase value of the AC component. The thickness analyzer measures the thickness of the thin film using the extracted phase value.

    Abstract translation: 提供了用于测量薄膜厚度的装置和系统。 该装置包括信号检测器，快速傅里叶变换（FFT）发生器，快速傅里叶逆变换（IFFT）发生器和厚度分析器。 信号检测器检测相对于从薄膜反射的反射光的电场信号。 FFT发生器相对于电场信号执行FFT，以将DC分量与电场信号的AC分量分离。 IFFT发生器接收电场信号的分离的AC分量，相对于AC分量执行IFFT，并提取AC分量的相位值。 厚度分析器使用提取的相位值来测量薄膜的厚度。

    APPARATUS FOR INSPECTING WAFER
    6.
    发明申请
    APPARATUS FOR INSPECTING WAFER 有权

    公开(公告)号：US20170115233A1

    公开(公告)日：2017-04-27

    申请号：US15183003

    申请日：2016-06-15

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Choon-Shik LEEM ,  Woo-Jin JUNG ,  Chung-Sam JUN

    IPC: G01N21/88 ,  G01N21/95 ,  H01L21/67

    CPC classification number: G01N21/8851 ,  G01N21/9501 ,  G01N2021/8861 ,  G01N2021/8887 ,  H01L21/67288

    Abstract: A wafer inspection apparatus including a derivation unit configured to derive a first polar coordinate set and a second polar coordinate set using a latin hypercube sampling, the first and second polar coordinate sets not overlapping each other, an inspection unit configured to perform defect inspections of a plurality of wafers using the first and second polar coordinate sets, a support unit configured to support the wafers, and an calculation unit configured to combine a defect inspection result using the first polar coordinate set with a defect inspection result using the second polar coordinate set may be provided.

    APPARATUS FOR FORMING A THIN LAYER AND METHOD OF FORMING A THIN LAYER ON A SUBSTRATE USNIG THE SAME
    7.
    发明申请
    APPARATUS FOR FORMING A THIN LAYER AND METHOD OF FORMING A THIN LAYER ON A SUBSTRATE USNIG THE SAME 有权
    用于形成薄层的装置和在基板上形成薄层的方法

    公开(公告)号：US20160181167A1

    公开(公告)日：2016-06-23

    申请号：US14975706

    申请日：2015-12-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Min-Kook KIM ,  Bang-Won KIM ,  Yu-Sin YANG ,  Young-Jee YOON ,  Sang-Kil LEE ,  Yoo-Seok JANG ,  Chung-Sam JUN

    IPC: H01L21/66 ,  H01L21/67 ,  C30B29/10 ,  H01L29/207 ,  C30B25/16 ,  C30B29/40 ,  H01L21/02 ,  H01L29/167

    CPC classification number: H01L22/26 ,  C30B25/165 ,  C30B29/40 ,  C30B29/52 ,  H01L22/12

    Abstract: An apparatus and method of forming an epitaxial layer are provided. The apparatus includes a process chamber in which an epitaxial process is performed to form epitaxial layer on a substrate. A first supplier supplies source gases for the epitaxial layer into the process chamber. A second supplier supplies dopants into the process chamber. A detector detects a composition ratio of the epitaxial layer and a concentration of the dopants in the epitaxial layer during the epitaxial growth process. And a controller controls a mass flow of at least one of the source gases and a mass flow of the dopants in-line with the epitaxial growth process. Accordingly, the layer thickness of the epitaxial layer can be accurately controlled in real time in line with the epitaxial process.

    Abstract translation: 提供一种形成外延层的装置和方法。 该装置包括处理室，其中进行外延处理以在衬底上形成外延层。 第一供应商将外延层的源气体供应到处理室中。 第二个供应商向处理室供应掺杂物。 检测器在外延生长过程中检测外延层的组成比和外延层中掺杂剂的浓度。 并且控制器控制至少一种源气体的质量流量和与外延生长过程一致的掺杂剂的质量流。 因此，可以根据外延工艺实时地精确地控制外延层的层厚度。

    Spectral Ellipsometry Measurement and Data Analysis Device and Related Systems and Methods
    9.
    发明申请
    Spectral Ellipsometry Measurement and Data Analysis Device and Related Systems and Methods 有权
    光谱椭偏仪测量和数据分析设备及相关系统和方法

    公开(公告)号：US20160025618A1

    公开(公告)日：2016-01-28

    申请号：US14806775

    申请日：2015-07-23

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung-Yoon Ryu ,  Woo-Seok KO ,  Yu-Sin YANG ,  Sang-Kil LEE ,  Chung-Sam JUN

    IPC: G01N21/21 ,  G01N21/95

    CPC classification number: G01N21/211 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/213

    Abstract: Spectral ellipsometry measurement systems are provided including a polarizer that rotates at a first angle and adjusts a polarizing direction of incident light of a measurement sample; a compensator that rotates at a second angle, different from the first angle, and adjusts a phase difference of the incident light; an analyzer that rotates at a third angle and adjusts a polarizing direction of light reflected on the measurement sample; a detector that detects a spectral image from the reflected light; a controller that controls one of the polarizer, the compensator, and the analyzer according to polarizer-compensator-analyzer (PCA) angle sets including the first to third angles; and a processor that receives, from the detector, a first spectral image corresponding to a first PCA angle set and a first wavelength and a second spectral image corresponding to a second PCA angle set and a second wavelength, different from the first wavelength, and generates a polarizer-compensator-analyzer rotating (PCAR) spectral matrix using the first and second spectral images.

    Abstract translation: 提供了光谱椭圆测量系统，其包括以第一角度旋转并调节测量样品的入射光的偏振方向的偏振器; 补偿器，其以与第一角度不同的第二角度旋转，并调节入射光的相位差; 分析器，其以第三角度旋转并调节在测量样品上反射的光的偏振方向; 从反射光检测光谱图像的检测器; 根据包括第一至第三角度的偏振器 - 补偿器分析器（PCA）角度集合控制偏振器，补偿器和分析器之一的控制器; 以及处理器，其从所述检测器接收对应于与所述第一波长不同的第一PCA角度集合和对应于第二PCA角度集合和第二波长的第一波长和第二光谱图像的第一光谱图像，并且生成 使用第一和第二光谱图像的偏振器 - 补偿器分析器旋转（PCAR）光谱矩阵。

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