公开(公告)号：US20140014897A1

公开(公告)日：2014-01-16

申请号：US13923048

申请日：2013-06-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-sub KIM ,  Denis SANNIKOV ,  Cheol-soo SONE ,  Jin-sub LEE

IPC: H01L33/06

CPC classification number: H01L33/06 ,  H01L33/12 ,  H01L33/32

Abstract: According to example embodiments, a semiconductor light emitting device including a doped buffer layer includes a substrate and a buffer layer on the substrate. The doping layer may include aluminum nitride (AlN) and the buffer layer may include a doping layer. An n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer may be on the buffer layer. An n-side electrode may be on the n-type nitride semiconductor layer. A p-side electrode may be on the p-type nitride semiconductor layer.

Abstract translation: 根据示例性实施例，包括掺杂缓冲层的半导体发光器件包括衬底和衬底上的缓冲层。 掺杂层可以包括氮化铝（AlN），并且缓冲层可以包括掺杂层。 n型氮化物半导体层，有源层和p型氮化物半导体层可以在缓冲层上。 n侧电极可以在n型氮化物半导体层上。 p侧电极可以在p型氮化物半导体层上。

公开(公告)号：US20160126409A1

公开(公告)日：2016-05-05

申请号：US14814732

申请日：2015-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Denis SANNIKOV

IPC: H01L33/06 ,  H01L33/36 ,  G09G3/32 ,  H01L33/32

CPC classification number: H01L33/06 ,  G09G3/32 ,  G09G2300/0426 ,  H01L33/325 ,  H01L33/50 ,  H01L2224/48463 ,  H01L2224/49107

Abstract: An ultraviolet light emitting apparatus may include a chamber, at least one semiconductor light emitting device, an electron beam irradiation source, and first and second connection electrodes configured to apply a voltage from an external power source to the at least one semiconductor light emitting device. The chamber may define an internal space and include a light emission window. The at least one semiconductor light emitting device may be on the light emission window and include a first conductivity type nitride semiconductor layer, an undoped nitride semiconductor layer, and an active layer between the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer. The electron beam irradiation source may be in the internal space of the chamber and configured to irradiate an electron beam onto the undoped nitride semiconductor layer.

Abstract translation: 紫外线发射装置可以包括室，至少一个半导体发光器件，电子束照射源，以及被配置为将来自外部电源的电压施加到至少一个半导体发光器件的第一和第二连接电极。 腔室可以限定内部空间并包括发光窗口。 所述至少一个半导体发光器件可以在所述发光窗口上并且包括第一导电型氮化物半导体层，未掺杂的氮化物半导体层以及所述第一导电型氮化物半导体层和所述未掺杂的氮化物半导体层之间的有源层。 电子束照射源可以在室的内部空间中并且被配置为将电子束照射到未掺杂的氮化物半导体层上。