公开(公告)号：US20240272559A1

公开(公告)日：2024-08-15

申请号：US18455277

申请日：2023-08-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Hyub LEE ,  Jeong-Gil KIM ,  Hyuck SHIN

IPC: G03F7/00 ,  H01L21/66

CPC classification number: G03F7/70591 ,  G03F7/70033 ,  H01L22/12

Abstract: A monitoring system for manufacturing a semiconductor device comprises a source module, an optical module including a collector collecting and reflecting extreme ultraviolet generated light from the source module, an illumination optical system including a field facet mirror, and a projection optical system transferring the extreme ultraviolet light reflected from a reticle to a substrate. A calculating module calculates a degradation rate of the optical module, and a method comprises respectively generating a reference image profile and an (N)th image profile through the second sensor module by correcting the far field image of the extreme ultraviolet with respect to the intensity of the extreme ultraviolet at a reference time point and an (N)th time point after the reference time point, and calculating the degradation rate of the optical module by using a ratio of the reference image profile and the (N)th image profile by the calculation module.

公开(公告)号：US20210183618A1

公开(公告)日：2021-06-17

申请号：US17186965

申请日：2021-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Hyub LEE ,  Dougyong SUNG ,  Je-Hun WOO ,  Bongseong KIM ,  Juho LEE ,  Yun-Kwang JEON ,  Junghyun CHO

IPC: H01J37/32

Abstract: Embodiments of the inventive concepts provide antennas, plasma generating circuits, plasma processing apparatus, and methods for manufacturing semiconductor devices using the same. The circuits include radio-frequency power sources generating radio-frequency powers, antennas receiving the radio-frequency powers to generate plasma and having a first mutual inductance, and inductors connecting the antennas to the radio-frequency power sources, respectively. The inductors have a second mutual inductance reducing and/or canceling the first mutual inductance.

公开(公告)号：US20180114675A1

公开(公告)日：2018-04-26

申请号：US15723837

申请日：2017-10-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Hyub LEE ,  Dougyong SUNG ,  Je-Hun WOO ,  Bongseong KIM ,  Juho Lee ,  Yun-Kwang JEON ,  Junghyun CHO

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/32119 ,  H01J37/32174 ,  H01J37/32183 ,  H01L21/67069

Abstract: Embodiments of the inventive concepts provide antennas, plasma generating circuits, plasma processing apparatus, and methods for manufacturing semiconductor devices using the same. The circuits include radio-frequency power sources generating radio-frequency powers, antennas receiving the radio-frequency powers to generate plasma and having a first mutual inductance, and inductors connecting the antennas to the radio-frequency power sources, respectively. The inductors have a second mutual inductance reducing and/or canceling the first mutual inductance.