公开(公告)号：US12288788B2

公开(公告)日：2025-04-29

申请号：US17410326

申请日：2021-08-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Inyeal Lee ,  Jinwook Kim ,  Dongbeen Kim ,  Deokhan Bae ,  Junghoon Seo ,  Myungyoon Um ,  Jongmil Youn ,  Yonggi Jeong

IPC: H01L27/088 ,  H01L23/50

Abstract: An integrated circuit device includes substrate including a fin-type active area extending on the substrate in a first direction parallel to an upper surface of the substrate, a first gate line crossing the fin-type active area on the substrate and extending in a second direction perpendicular to the first direction, a cut gate line extending in the second direction and being spaced apart from the first gate line with a first gate cut area therebetween, a second gate line extending in the second direction and being spaced apart from the cut gate line with a second gate cut area therebetween, and a power wiring disposed on the cut gate line.

公开(公告)号：US12288749B2

公开(公告)日：2025-04-29

申请号：US18647307

申请日：2024-04-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Inyeal Lee ,  Dongbeen Kim ,  Jinwook Kim ,  Juhun Park ,  Deokhan Bae ,  Junghoon Seo ,  Myungyoon Um

IPC: H01L23/522 ,  H01L23/00 ,  H01L23/535 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786

Abstract: A circuit chip including a substrate, first and second channel active regions on the substrate, and extending in a first direction, the second channel active regions spaced apart from the first channel regions in a second direction intersecting the first direction, first and second gate electrodes intersecting the second channel active regions, third and fourth gate electrodes intersecting the first channel active regions, and a contact electrode between the first, second, third, and fourth gate electrodes. The contact electrode including a stem section in a vertical direction, and first and second branch sections extending from the stem section and contacting a respective source/drain region on the first and second channel active regions, the first gate electrode and the third gate electrode overlapping in the second direction, and including edge portions having widths decreasing as the first gate electrode and the third gate electrode extend toward facing ends thereof.

公开(公告)号：US11996364B2

公开(公告)日：2024-05-28

申请号：US17521080

申请日：2021-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Inyeal Lee ,  Dongbeen Kim ,  Jinwook Kim ,  Juhun Park ,  Deokhan Bae ,  Junghoon Seo ,  Myungyoon Um

IPC: H01L23/535 ,  H01L23/00 ,  H01L23/522 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L23/535 ,  H01L23/5226 ,  H01L24/13 ,  H01L27/0924 ,  H01L29/0665 ,  H01L29/41733 ,  H01L29/41791 ,  H01L29/42392 ,  H01L29/78391 ,  H01L29/7851 ,  H01L29/78696 ,  H01L2224/13025

Abstract: A circuit chip including a substrate, first and second channel active regions on the substrate, and extending in a first direction, the second channel active regions spaced apart from the first channel regions in a second direction intersecting the first direction, first and second gate electrodes intersecting the second channel active regions, third and fourth gate electrodes intersecting the first channel active regions, and a contact electrode between the first, second, third, and fourth gate electrodes. The contact electrode including a stem section in a vertical direction, and first and second branch sections extending from the stem section and contacting a respective source/drain region on the first and second channel active regions, the first gate electrode and the third gate electrode overlapping in the second direction, and including edge portions having widths decreasing as the first gate electrode and the third gate electrode extend toward facing ends thereof.