公开(公告)号：US20200013595A1

公开(公告)日：2020-01-09

申请号：US16259185

申请日：2019-01-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongwoo LEE ,  Youngjin NOH ,  Dowon KIM ,  Donghyeon NA ,  Seungbo SHIM

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: An electrostatic chuck includes a chuck base having a first hole, an upper plate provided on the chuck base, the upper plate having a second hole aligned with the first hole, and an adhesive layer attaching the upper plate to the chuck base, the adhesive layer having a thickness that is less than a diameter of the first hole and equal to a diameter of the second hole.

公开(公告)号：US20210104382A1

公开(公告)日：2021-04-08

申请号：US16891157

申请日：2020-06-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yonghee KIM ,  Byunghun HAN ,  Hyeongmo KANG ,  Donghyeon NA ,  Dougyong SUNG ,  Seungbo SHIM ,  Minjae LEE ,  Myungsun CHOI ,  Minyoung HUR

IPC: H01J37/32 ,  H03H7/38 ,  H01L21/683 ,  H01L21/3065

Abstract: A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.

公开(公告)号：US20230145476A1

公开(公告)日：2023-05-11

申请号：US17833438

申请日：2022-06-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongha JEONG ,  Kyung-Sun KIM ,  Dongwan KIM ,  Donghyeon NA ,  Dougyong SUNG ,  Myeongsoo SHIN ,  Ungyo JUNG

IPC: H01L21/683 ,  C23C16/458

CPC classification number: H01L21/6833 ,  C23C16/4585 ,  C23C16/4586

Abstract: A chuck assembly includes a chuck base including a lower base and an upper base that is on the lower base, a ceramic plate on the upper base, an isolator ring enclosing an outer sidewall of the lower base, a focus ring on an edge portion of the lower base and the isolator ring, the focus ring enclosing an outer sidewall of the upper base, and a pad that is between the edge portion of the lower base and the focus ring. The pad may contain a nonmetal conductive material.

公开(公告)号：US20230084124A1

公开(公告)日：2023-03-16

申请号：US17991024

申请日：2022-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yonghee KIM ,  Byunghun HAN ,  Hyeongmo KANG ,  Donghyeon NA ,  Dougyong SUNG ,  Seungbo SHIM ,  Minjae LEE ,  Myungsun CHOI ,  Minyoung HUR

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/3065 ,  H03H7/38

Abstract: A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.

公开(公告)号：US20200373126A1

公开(公告)日：2020-11-26

申请号：US16870186

申请日：2020-05-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghyeon NA ,  Hyosin KIM ,  Seungbo SHIM ,  Hadong JIN ,  Dougyong SUNG ,  Minyoung HUR

IPC: H01J37/32

Abstract: A plasma control apparatus for controlling plasma to be uniformly distributed in a plasma chamber and a plasma processing system including the same are provided. The plasma control apparatus includes a transmission line configured to deliver radio frequency (RF) power to a plasma chamber through at least two frequencies, a matching circuit configured to control impedance for maximum delivery of the RF power, and a plasma control circuit configured to selectively and independently control harmonics at a very high frequency (VHF) among the at least two frequencies and to control plasma distribution in the plasma chamber by producing resonance for the harmonics.