公开(公告)号：US20230245608A1

公开(公告)日：2023-08-03

申请号：US18296626

申请日：2023-04-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daehee PARK ,  Junghyung KIM ,  Hankon KIM ,  Junkyu PARK ,  Dongil SON ,  Jaehoon SONG ,  Seungbo SHIM ,  Duhoon JUNG ,  Myungkyoon CHUNG

IPC: G09G3/00 ,  G06F3/04847 ,  G06F3/0488 ,  G06F3/04845 ,  G06F3/041

CPC classification number: G09G3/035 ,  G06F3/04847 ,  G06F3/0488 ,  G06F3/04845 ,  G06F3/0416 ,  G09G2354/00 ,  G09G2340/04

Abstract: An electronic device is provided. The electronic device includes a first housing, a second housing movable with respect to the first housing, a motor for moving the second housing to be inserted and/or withdrawn with respect to the first housing, a display for displaying a display area having a size changeable according to the movement of the second housing, and a processor operatively connected to the display and the motor and being configured to identify whether a maintenance mode in which the size of the display area is maintained in a determined size is activated, control the motor to move the second housing according to the state of the electronic device corresponding to the deactivation of the maintenance mode, and maintain the size of the display area to be the determined size corresponding to the activation of the maintenance mode.

公开(公告)号：US20230011480A1

公开(公告)日：2023-01-12

申请号：US17833184

申请日：2022-06-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungbo SHIM ,  Junghoon PARK ,  Jinyoung BANG

IPC: H05K1/02 ,  H05K1/14 ,  H05K1/11

Abstract: An electronic device includes: a first printed circuit board (PCB) including a first plate and a first hole formed in the first plate, a second PCB including a second plate, an interposer including a third plate positioned between the first plate and the second plate, a plurality of first vias connecting the first plate and the third plate, a plurality of second vias connecting the second plate and the third plate, and a first reinforcement portion positioned in the first hole to bond the first plate and the third plate.

公开(公告)号：US20230075642A1

公开(公告)日：2023-03-09

申请号：US17901263

申请日：2022-09-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihwan KIM ,  Hyunbae KIM ,  Hongseung CHO ,  Seungbo SHIM ,  Sungyeol KIM

IPC: H01J37/32

Abstract: A high voltage power supply apparatus includes a high voltage direct current voltage source, a power switch configured to apply an output of the high voltage direct current voltage source to process equipment, and a sensing circuit unit including a sensor unit including a sensor and at least one operational amplifier, a reference voltage detection unit connected to a node between the sensor and the at least one operational amplifier, and a digital signal processing unit, wherein the sensing circuit unit is connected to an output terminal through which an output of the high voltage direct current voltage source is applied to the process equipment.

公开(公告)号：US20220400572A1

公开(公告)日：2022-12-15

申请号：US17893739

申请日：2022-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghoon PARK ,  Seungbo SHIM ,  Yongjin WOO ,  Junhee HAN ,  Dongil SON

IPC: H05K7/14 ,  H05K5/00 ,  H05K1/02

Abstract: An electronic device is provided. The electronic device includes a housing, a first printed circuit board disposed in the inner space of the housing, a second printed circuit board disposed so as to overlap at least a portion of the first printed circuit board, when the first printed circuit board is viewed from above, a first interposer disposed between the first printed circuit board and the second printed circuit board, and electrically connecting the first printed circuit board and the second printed circuit board, and at least one second interposer which is disposed between the first printed circuit board and the second printed circuit board so as to be spaced apart from the first interposer when the first printed circuit board is viewed from above, and which electrically connects the first printed circuit board and the second printed circuit board.

公开(公告)号：US20210144856A1

公开(公告)日：2021-05-13

申请号：US17091349

申请日：2020-11-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghoon PARK ,  Seungbo SHIM ,  Seunggoo KANG ,  Seockkeun HAN ,  Dongil SON

IPC: H05K1/14 ,  H05K1/11

Abstract: Provided is an electronic device. The electronic device may include a housing; a first printed circuit board (PCB) disposed in an internal space of the housing and including a plurality of first conductive terminals; a second PCB arranged parallel to the first PCB in the internal space, and including a plurality of second conductive terminals; and an interposer disposed between the first PCB and the second PCB to electrically connect the first PCB and the second PCB, the interposer including: a dielectric substrate including a first substrate surface facing the first PCB, a second substrate surface facing the second PCB, and a substrate side surface surrounding a space between the first substrate surface and the second substrate surface; a plurality of conductive vias formed to penetrate from the first substrate surface of the dielectric substrate to the second substrate surface, and electrically connecting the plurality of first conductive terminals to the plurality of second conductive terminals; and a first conductive pattern formed from at least a portion of the substrate side surface to the first PCB, wherein the first conductive pattern may be electrically connected to a first conductive pad formed on the first PCB and electrically connected to the at least one first electrical element.

公开(公告)号：US20230207294A1

公开(公告)日：2023-06-29

申请号：US17970163

申请日：2022-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hadong JIN ,  Siyoung KOH ,  Namkyun KIM ,  Kyungmin LEE ,  Sungyong LIM ,  Sungyeol KIM ,  Seungbo SHIM

IPC: H01J37/32

CPC classification number: H01J37/3299 ,  H01J37/32082 ,  H01J37/32155 ,  H01J37/32174 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32642 ,  H01J2237/334 ,  H01J2237/24564 ,  H01L21/6831

Abstract: Provided is a plasma control apparatus including a plasma electrode disposed in a plasma chamber and to which radio frequency (RF) power having a fundamental frequency configured to generate plasma is applied, an edge electrode disposed adjacent to the plasma electrode and corresponding to a plasma edge region, and a plasma control circuit electrically connected to the edge electrode, the plasma control circuit being configured to control an electrical boundary condition in a plasma edge boundary region of a first frequency component, a harmonic wave component generated by nonlinearity of the plasma and intermodulation distortion frequency components generated by a frequency component in the plasma chamber and each of the first frequency component and the harmonic wave component, wherein the plasma control circuit is configured to change the electrical boundary condition to control a standing wave in the plasma chamber.

公开(公告)号：US20230123891A1

公开(公告)日：2023-04-20

申请号：US18085949

申请日：2022-12-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byungjo KIM ,  Sangki NAM ,  Jungmin KO ,  Kwonsang SEO ,  Seungbo SHIM ,  Younghyun JO

IPC: H01J37/32

Abstract: An upper electrode used for a substrate processing apparatus using plasma is provided. The upper electrode includes a bottom surface including a center region and an edge region having a ring shape and surrounding the center region, a first protrusion portion protruding toward plasma from the edge region and having a ring shape, wherein the first protrusion portion includes a first apex corresponding to a radial local maximum point toward the plasma, and a first distance, which is a radial-direction distance between the first apex and a center axis of the upper electrode, is greater than a radius of a substrate.

公开(公告)号：US20230084124A1

公开(公告)日：2023-03-16

申请号：US17991024

申请日：2022-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yonghee KIM ,  Byunghun HAN ,  Hyeongmo KANG ,  Donghyeon NA ,  Dougyong SUNG ,  Seungbo SHIM ,  Minjae LEE ,  Myungsun CHOI ,  Minyoung HUR

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/3065 ,  H03H7/38

Abstract: A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.

公开(公告)号：US20200373126A1

公开(公告)日：2020-11-26

申请号：US16870186

申请日：2020-05-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghyeon NA ,  Hyosin KIM ,  Seungbo SHIM ,  Hadong JIN ,  Dougyong SUNG ,  Minyoung HUR

IPC: H01J37/32

Abstract: A plasma control apparatus for controlling plasma to be uniformly distributed in a plasma chamber and a plasma processing system including the same are provided. The plasma control apparatus includes a transmission line configured to deliver radio frequency (RF) power to a plasma chamber through at least two frequencies, a matching circuit configured to control impedance for maximum delivery of the RF power, and a plasma control circuit configured to selectively and independently control harmonics at a very high frequency (VHF) among the at least two frequencies and to control plasma distribution in the plasma chamber by producing resonance for the harmonics.

公开(公告)号：US20200161157A1

公开(公告)日：2020-05-21

申请号：US16456757

申请日：2019-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongwoo LEE ,  Youngjin NOH ,  Myungsun CHOI ,  Minyoung HUR ,  Seungbo SHIM ,  Jaehak LEE

IPC: H01L21/683 ,  H01L21/3065 ,  H01J37/32

Abstract: Electrostatic chucks, plasma processing apparatuses, and methods of fabricating semiconductor devices using the same are provided. The electrostatic chuck includes a chuck base, an upper plate provided on the chuck base, and an inner plate provided between the chuck base and the upper plate. A first diameter of the inner plate is less than a second diameter of the upper plate.