公开(公告)号：US20180005688A1

公开(公告)日：2018-01-04

申请号：US15701636

申请日：2017-09-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho-sung YOON ,  Doo-young KIM

IPC: G11C11/4076 ,  H01L29/423 ,  H01L27/108 ,  H03K5/15 ,  G11C11/4096

CPC classification number: G11C11/4076 ,  G11C7/04 ,  G11C7/1066 ,  G11C7/222 ,  G11C11/4096 ,  G11C2207/2272 ,  H01L27/108 ,  H01L29/42364 ,  H03K5/15066

Abstract: Provided is a memory device including a delay circuit having gate insulation films with thicknesses different from each other. The memory device includes a delay circuit configured to input an input signal and output an output signal, and circuit blocks configured to control an operation of reading or writing memory cell data in response to the input signal or the output signal. One of transistors constituting a circuit block has a gate insulation film having such a thickness that an effect of negative biased temperature instability (NBTI) or positive biased temperature instability (PBTI) on the transistors is minimized. The delay circuit may be affected little by a shift in a threshold voltage that may be caused by NTBI or PBTI, and thus, achieve target delay time.

公开(公告)号：US20170125082A1

公开(公告)日：2017-05-04

申请号：US15206354

申请日：2016-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho-sung YOON ,  Doo-young KIM

IPC: G11C11/4076 ,  G11C11/4096 ,  H03K5/15 ,  H01L29/423 ,  H01L27/108

CPC classification number: G11C11/4076 ,  G11C7/04 ,  G11C7/1066 ,  G11C7/222 ,  G11C11/4096 ,  G11C2207/2272 ,  H01L27/108 ,  H01L29/42364 ,  H03K5/15066

Abstract: Provided is a memory device including a delay circuit having gate insulation films with thicknesses different from each other. The memory device includes a delay circuit configured to input an input signal and output an output signal, and circuit blocks configured to control an operation of reading or writing memory cell data in response to the input signal or the output signal. One of transistors constituting a circuit block has a gate insulation film having such a thickness that an effect of negative biased temperature instability (NBTI) or positive biased temperature instability (PBTI) on the transistors is minimized. The delay circuit may be affected little by a shift in a threshold voltage that may be caused by NTBI or PBTI, and thus, achieve target delay time.

公开(公告)号：US20150289024A1

公开(公告)日：2015-10-08

申请号：US14680613

申请日：2015-04-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae-won YOON ,  Min-seup KIM ,  Soo-hwan KIM ,  Doo-young KIM ,  Min-gu ROH ,  Chun-woo PARK ,  Yun-sun LEE

IPC: H04N21/4782 ,  H04L29/08

CPC classification number: H04L67/02 ,  H04N21/2668 ,  H04N21/4622 ,  H04N21/482

Abstract: Provided herein is a display apparatus, a method thereof, a server, a method thereof, and a system including the display apparatus and the server. The display apparatus includes: a display configured to display a screen; and a processor configured to output for display, on the screen, a virtual channel list that includes at least one channel to which web-based service information is mapped, and to output for display, on the screen, a web content obtainable through a web-based service of the at least one channel of the virtual channel list according to a predetermined event.

Abstract translation: 本文提供了显示装置，其方法，服务器，其方法以及包括显示装置和服务器的系统。 显示装置包括：显示器，被配置为显示屏幕; 以及处理器，被配置为输出以在屏幕上显示虚拟频道列表，该虚拟频道列表包括至少一个基于web的服务信息被映射到的频道，并且在屏幕上输出用于在网络上显示可通过网络获得的网络内容 根据预定事件，虚拟频道列表的至少一个频道的服务。

公开(公告)号：US20130242643A1

公开(公告)日：2013-09-19

申请号：US13792820

申请日：2013-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doo-young KIM ,  Sung-hoon KIM

IPC: G11C11/4063

CPC classification number: G11C11/4063 ,  G11C5/14 ,  G11C11/4074 ,  H01L23/5223 ,  H01L23/5286 ,  H01L23/66 ,  H01L27/10814 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10894 ,  H01L27/10897 ,  H01L28/90 ,  H01L2223/6666 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor memory device includes a power decoupling capacitor (PDC) for preventing effective capacitance reduction during a high frequency operation. The semiconductor memory device includes the PDC to which a cell capacitor type decoupling capacitor is connected in series. The PDC includes a metal conductive layer electrically connected in parallel to a conductive layer formed on the same level as a bit line of a cell array region, wherein a plurality of decoupling capacitors in a first group and a plurality of decoupling capacitors in a second group are respectively connected to each other in parallel in a peripheral circuit region, and a storage electrode of the first group and a storage electrode of the second group are electrically connected to each other in series through the conductive layer.

Abstract translation: 半导体存储器件包括用于在高频操作期间防止有效电容降低的功率去耦电容器（PDC）。 半导体存储器件包括串联连接有单元电容器型去耦电容器的PDC。 PDC包括与形成在与电池阵列区域的位线相同的电平上的导电层电连接的金属导电层，其中第一组中的多个去耦电容器和第二组中的多个去耦电容器 在外围电路区域中分别彼此并联连接，并且第一组的存储电极和第二组的存储电极通过导电层彼此串联电连接。

公开(公告)号：US20170221543A1

公开(公告)日：2017-08-03

申请号：US15492825

申请日：2017-04-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doo-young KIM ,  Sung-hoon KIM

IPC: G11C11/4074 ,  H01L23/66 ,  H01L27/108

CPC classification number: G11C11/4063 ,  G11C5/14 ,  G11C11/4074 ,  H01L23/5223 ,  H01L23/5286 ,  H01L23/66 ,  H01L27/10814 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10894 ,  H01L27/10897 ,  H01L28/90 ,  H01L2223/6666 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor memory device includes a power decoupling capacitor (PDC) for preventing effective capacitance reduction during a high frequency operation. The semiconductor memory device includes the PDC to which a cell capacitor type decoupling capacitor is connected in series. The PDC includes a metal conductive layer electrically connected in parallel to a conductive layer formed on the same level as a bit line of a cell array region, wherein a plurality of decoupling capacitors in a first group and a plurality of decoupling capacitors in a second group are respectively connected to each other in parallel in a peripheral circuit region, and a storage electrode of the first group and a storage electrode of the second group are electrically connected to each other in series through the conductive layer.