公开(公告)号：US11869569B2

公开(公告)日：2024-01-09

申请号：US17659475

申请日：2022-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Kyu Kang ,  Jieun Shin ,  Hocheol Bang ,  Haewon Lee

IPC: G11C16/34 ,  G11C11/406 ,  G11C7/10 ,  G11C11/4076

CPC classification number: G11C11/40615 ,  G11C7/109 ,  G11C7/1063 ,  G11C11/4076 ,  G11C11/40622 ,  G11C16/3495 ,  G06F2212/1036

Abstract: A semiconductor memory device includes a mammy cell array including a plurality of memory cells and a control logic circuit configured to control the semiconductor memory device. The control logic circuit includes a mode register and a remaining lifetime calculating device configured to count usage metrics based on one or more of the following: a number of clock signals received from a memory controller, an amount of data transmitted or received to or from the memory controller, and/or a number of commands received from the memory controller. The remaining lifetime calculating device generates a remaining lifetime code representing a remaining lifetime of the semiconductor memory device based on the usage metrics, and stores the remaining lifetime code in the mode register.

公开(公告)号：US10367029B2

公开(公告)日：2019-07-30

申请号：US15800376

申请日：2017-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haewon Lee ,  Sangjoo Lee ,  Moosup Lim ,  Younghwan Park ,  Dongjoo Yang ,  Kang-Sun Lee ,  Jiwon Lee

IPC: H01L31/02 ,  H04N5/374 ,  H04N5/378 ,  H01L27/146

Abstract: An image sensor includes a separation impurity layer in a semiconductor layer and defining a photoelectric conversion region and a readout circuit region, a photoelectric conversion layer in the semiconductor layer of the photoelectric conversion region and surrounded by the separation impurity layer, a floating diffusion region spaced apart from the photoelectric conversion layer and in the semiconductor layer of the photoelectric conversion region, a transfer gate electrode between the photoelectric conversion layer and the floating diffusion region, and impurity regions in the semiconductor layer of the readout circuit region. When the photoelectric conversion layer is integrated with photo-charges, the separation impurity layer has a first potential level around the photoelectric conversion layer and a second potential level on a portion between the photoelectric conversion layer and the impurity regions of the readout circuit region. The second potential level is greater than the first potential level.