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1.发明公开公开(公告)号：US20230238484A1
公开(公告)日：2023-07-27
申请号：US17967318
申请日：2022-10-17
发明人： Younghwan Park , Joosung Kim , Dongchul Shin , Junhee Choi
CPC分类号： H01L33/20 , H01L33/325 , H01L33/382 , H01L33/0075 , H01L27/156
摘要： Provided are nanorod light emitting diodes (LEDs), display apparatuses, and manufacturing methods thereof. The nanorod LED includes a first-type semiconductor layer including a body and a pyramidal structure continuously provided from the body, a nitride light emitting layer provided on the pyramidal structure, and a second-type semiconductor layer provided in the nitride light emitting layer.
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公开(公告)号：US11588046B2
公开(公告)日：2023-02-21
申请号：US17386729
申请日：2021-07-28
发明人： Dongchul Shin , Boram Kim , Younghwan Park , Jongseob Kim , Joonyong Kim , Junhyuk Park , Jaejoon Oh , Minchul Yu , Soogine Chong , Sunkyu Hwang , Injun Hwang
IPC分类号： H01L29/778 , H01L29/205 , H01L29/20
摘要： A high electron mobility transistor (HEMT) includes a channel layer, a plurality of barrier layers, and a p-type semiconductor layer. The barrier layers have an energy band gap greater than that of the channel layer. A gate electrode is arranged on the p-type semiconductor layer. A source electrode and a drain electrode are apart from the p-type semiconductor layer and the gate electrode on the barrier layers. Impurity concentrations of the barrier layers are different from each other in a drift area between the source electrode and the drain electrode.
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公开(公告)号：US11538268B2
公开(公告)日：2022-12-27
申请号：US17500434
申请日：2021-10-13
发明人： Jaehyun Lim , Younghwan Park , Kwangjin Lee , Inho Choi , Hyuntaek Choi
IPC分类号： G06V40/13
摘要： A fingerprint sensor package includes a package substrate including an upper surface in which a sensing region and a peripheral region surrounding the sensing region are defined, and a lower surface facing the upper surface; a plurality of first sensing patterns located are arranged in the sensing region, are apart from each other in a first direction, and extend in a second direction crossing the first direction; a plurality of second sensing patterns that are arranged in the sensing region, are apart from each other in the second direction, and extend in the first direction; a coating member covering the sensing region; an upper ground pattern in the peripheral region and apart from the coating member to surround the coating member in the first and second directions; and a controller chip on the lower surface of the package substrate; and a plurality of capacitors.
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公开(公告)号：US12119397B2
公开(公告)日：2024-10-15
申请号：US17465212
申请日：2021-09-02
发明人： Sunkyu Hwang , Jongseob Kim , Joonyong Kim , Younghwan Park , Junhyuk Park , Jaejoon Oh , Injun Hwang
IPC分类号： H01L29/00 , H01L29/20 , H01L29/66 , H01L29/778
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/66431
摘要： A semiconductor integrated circuit device includes: a channel layer, a barrier layer; a first p-type semiconductor layer and a second p-type semiconductor layer, spaced apart from each other on the barrier layer; and a passivation layer on the first p-type semiconductor layer and the second p-type semiconductor layer. The passivation layer may partially inactivate a dopant of at least one of the first p-type semiconductor layer and the second p-type semiconductor layer.
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公开(公告)号：US12002879B2
公开(公告)日：2024-06-04
申请号：US17098896
申请日：2020-11-16
发明人： Sunkyu Hwang , Joonyong Kim , Jongseob Kim , Junhyuk Park , Boram Kim , Younghwan Park , Dongchul Shin , Jaejoon Oh , Soogine Chong , Injun Hwang
IPC分类号： H01L29/778 , H01L29/66
CPC分类号： H01L29/7786 , H01L29/66462 , H01L29/7787
摘要： Provided is a high electron mobility transistor including: a channel layer comprising a 2-dimensional electron gas (2DEG); a barrier layer on the channel layer and comprising first regions and a second region, the first regions configured to induce the 2DEG of a first density in portions of the channel layer and the second region configured to induce the 2DEG of a second density different from the first density in other portions of the channel layer; source and drain electrodes on the barrier layer; a depletion formation layer formed on the barrier layer between the source and drain electrodes to form a depletion region in the 2DEG; and a gate electrode on the barrier layer. The first regions may include a first edge region and a second edge region corresponding to both ends of a surface of the gate electrode facing the channel layer.
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公开(公告)号：US11837642B2
公开(公告)日：2023-12-05
申请号：US17016877
申请日：2020-09-10
发明人： Soogine Chong , Jongseob Kim , Joonyong Kim , Younghwan Park , Junhyuk Park , Dongchul Shin , Jaejoon Oh , Sunkyu Hwang , Injun Hwang
IPC分类号： H01L29/423 , H01L21/02 , H01L21/285 , H01L21/765 , H01L23/31 , H01L29/20 , H01L29/205 , H01L29/40 , H01L29/66 , H01L29/778
CPC分类号： H01L29/42316 , H01L21/022 , H01L21/0217 , H01L21/02164 , H01L21/02178 , H01L21/28587 , H01L21/765 , H01L23/3171 , H01L23/3192 , H01L29/2003 , H01L29/205 , H01L29/404 , H01L29/66462 , H01L29/7786
摘要： A semiconductor device includes a channel layer including a channel; a channel supply layer on the channel layer; a channel separation pattern on the channel supply layer; a gate electrode pattern on the channel separation pattern; and an electric-field relaxation pattern protruding from a first lateral surface of the gate electrode pattern in a first direction parallel with an upper surface of the channel layer. An interface between the channel layer and the channel supply layer is adjacent to channel. A size of the gate electrode pattern in the first direction is different from a size of the channel separation pattern in the first direction. The gate electrode pattern and the electric-field relaxation pattern form a single structure.
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公开(公告)号：US20230143907A1
公开(公告)日：2023-05-11
申请号：US17720872
申请日：2022-04-14
发明人： Junhee Choi , Kiho Kong , Nakhyun Kim , Joosung Kim , Younghwan Park , Junghun Park , Dongchul Shin , Eunsung Lee , Joohun Han
CPC分类号： H01L33/04 , H01L27/156 , H01L33/24 , H01L33/44
摘要： Provided is an epitaxy structure including a substrate having an upper surface, the upper surface having a single crystal structure, a two-dimensional material layer disposed on the upper surface of the substrate, and a plurality of nanorod light emitting devices disposed on an upper surface of the two-dimensional material layer, each of the plurality of nanorod light emitting devices having a nanorod shape extending in a vertical direction, wherein each of the plurality of nanorod light emitting devices includes a light emitting nanorod, and a passivation film disposed adjacent to a sidewall of the light emitting nanorod, the passivation film having insulation.
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公开(公告)号：US11888059B2
公开(公告)日：2024-01-30
申请号：US17349327
申请日：2021-06-16
发明人： Injun Hwang , Jongseob Kim , Joonyong Kim , Younghwan Park , Junhyuk Park , Dongchul Shin , Jaejoon Oh , Soogine Chong , Sunkyu Hwang
IPC分类号： H01L29/10 , H01L29/778 , H01L29/78 , H01L29/20 , H01L29/205 , H01L29/08 , H01L29/40
CPC分类号： H01L29/7813 , H01L29/086 , H01L29/0869 , H01L29/0878 , H01L29/0886 , H01L29/1033 , H01L29/1037 , H01L29/1054 , H01L29/1095 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/404 , H01L29/407 , H01L29/7803 , H01L29/7831
摘要： Provided is a field effect transistor (FET) including a gradually varying composition channel. The FET includes: a drain region; a drift region on the drain region; a channel region on the drift region; a source region on the channel region; a gate penetrating the channel region and the source region in a vertical direction; and a gate oxide surrounding the gate. The channel region has a gradually varying composition along the vertical direction such that an intensity of a polarization in the channel region gradually varies.
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公开(公告)号：US11120330B2
公开(公告)日：2021-09-14
申请号：US15662225
申请日：2017-07-27
发明人： Younghwan Park , Kyounghoon Kim , Seungwon Lee , Hansu Cho , Sukjin Kim
摘要： The present disclosure relates to a communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. A Processing Element (PE) implemented in an accelerator in a convolutional neural network, which includes a first buffer configured to transfer input data to one other PE, and a second buffer configured to transmit to an outside output data that is processed on the basis of the input data; and an operation unit configured to generate output data.
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公开(公告)号：US11069802B2
公开(公告)日：2021-07-20
申请号：US16703128
申请日：2019-12-04
发明人： Injun Hwang , Jongseob Kim , Joonyong Kim , Younghwan Park , Junhyuk Park , Dongchul Shin , Jaejoon Oh , Soogine Chong , Sunkyu Hwang
摘要： Provided is a field effect transistor (FET) including a gradually varying composition channel. The FET includes: a drain region; a drift region on the drain region; a channel region on the drift region; a source region on the channel region; a gate penetrating the channel region and the source region in a vertical direction; and a gate oxide surrounding the gate. The channel region has a gradually varying composition along the vertical direction such that an intensity of a polarization in the channel region gradually varies.
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