公开(公告)号：US09232161B2

公开(公告)日：2016-01-05

申请号：US14206126

申请日：2014-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Ho Suh ,  Kwi-Sung Yoo ,  Seung-Hyun Lim ,  Seog-Heon Ham ,  Kang-Sun Lee

IPC: H04N5/357 ,  H04N5/374 ,  H04N5/378 ,  H04N9/04 ,  H04N5/3745

CPC classification number: H04N5/3575 ,  H04N5/37457 ,  H04N5/378 ,  H04N9/045

Abstract: An image sensor includes a pixel array and a plurality of pairs of column lines. The pixel array includes a plurality of unit pixel areas arranged in a plurality of rows and columns. Each of the unit pixel areas includes a readout circuit connected to a corresponding pair of column lines, and first and second photo-electric conversion devices sharing the readout circuit. Each of the unit pixel areas is configured to output a first pixel signal corresponding to a photoelectron generated by the first photo-electric conversion device through the first column line, and to output a second pixel signal corresponding to a photoelectron generated by the second photo-electric conversion device through the second column line.

Abstract translation: 图像传感器包括像素阵列和多对列线。 像素阵列包括以多个行和列排列的多个单位像素区域。 每个单位像素区域包括连接到相应的一对列线的读出电路，以及共享读出电路的第一和第二光电转换装置。 每个单位像素区域被配置为通过第一列线输出与由第一光电转换装置产生的光电子相对应的第一像素信号，并且输出与由第二光电转换装置产生的光电子相对应的第二像素信号， 电转换装置通过第二列线。

公开(公告)号：US10367029B2

公开(公告)日：2019-07-30

申请号：US15800376

申请日：2017-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haewon Lee ,  Sangjoo Lee ,  Moosup Lim ,  Younghwan Park ,  Dongjoo Yang ,  Kang-Sun Lee ,  Jiwon Lee

IPC: H01L31/02 ,  H04N5/374 ,  H04N5/378 ,  H01L27/146

Abstract: An image sensor includes a separation impurity layer in a semiconductor layer and defining a photoelectric conversion region and a readout circuit region, a photoelectric conversion layer in the semiconductor layer of the photoelectric conversion region and surrounded by the separation impurity layer, a floating diffusion region spaced apart from the photoelectric conversion layer and in the semiconductor layer of the photoelectric conversion region, a transfer gate electrode between the photoelectric conversion layer and the floating diffusion region, and impurity regions in the semiconductor layer of the readout circuit region. When the photoelectric conversion layer is integrated with photo-charges, the separation impurity layer has a first potential level around the photoelectric conversion layer and a second potential level on a portion between the photoelectric conversion layer and the impurity regions of the readout circuit region. The second potential level is greater than the first potential level.