公开(公告)号：US11114364B2

公开(公告)日：2021-09-07

申请号：US16223642

申请日：2018-12-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hee-Jeong Kim ,  Juhyun Lyu ,  Un-Byoung Kang ,  Jongho Lee

IPC: H01L23/373 ,  H01L23/31 ,  H01L23/367

Abstract: Disclosed is a semiconductor package comprising first and second semiconductor structures spaced apart on a first substrate, a heat sink covering the first and second semiconductor structure and the first substrate, and a thermal interface material layer between the heat sink and the first and second semiconductor structures. The first semiconductor structure includes a first sidewall adjacent to the second semiconductor structure and a second sidewall opposite the first sidewall. The thermal interface material layer includes a first segment between the first and second semiconductor structures and a second segment protruding beyond the second sidewall. A first distance from a top surface of the first substrate to a lowest point of a bottom surface of the first segment is less than a second distance from the top surface of the first substrate to a lowest point of a bottom surface of the second segment.

公开(公告)号：US11735494B2

公开(公告)日：2023-08-22

申请号：US17408988

申请日：2021-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hee-Jeong Kim ,  Juhyun Lyu ,  Un-Byoung Kang ,  Jongho Lee

IPC: H01L23/373 ,  H01L23/31 ,  H01L23/367

CPC classification number: H01L23/3735 ,  H01L23/3185 ,  H01L23/367

Abstract: Disclosed is a semiconductor package comprising first and second semiconductor structures spaced apart on a first substrate, a heat sink covering the first and second semiconductor structure and the first substrate, and a thermal interface material layer between the heat sink and the first and second semiconductor structures. The first semiconductor structure includes a first sidewall adjacent to the second semiconductor structure and a second sidewall opposite the first sidewall. The thermal interface material layer includes a first segment between the first and second semiconductor structures and a second segment protruding beyond the second sidewall. A first distance from a top surface of the first substrate to a lowest point of a bottom surface of the first segment is less than a second distance from the top surface of the first substrate to a lowest point of a bottom surface of the second segment.

公开(公告)号：US20200020606A1

公开(公告)日：2020-01-16

申请号：US16223642

申请日：2018-12-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hee-Jeong Kim ,  Juhyun LYU ,  Un-Byoung KANG ,  Jongho LEE

IPC: H01L23/373 ,  H01L23/367 ,  H01L23/31

Abstract: Disclosed is a semiconductor package comprising first and second semiconductor structures spaced apart on a first substrate, a heat sink covering the first and second semiconductor structure and the first substrate, and a thermal interface material layer between the heat sink and the first and second semiconductor structures. The first semiconductor structure includes a first sidewall adjacent to the second semiconductor structure and a second sidewall opposite the first sidewall. The thermal interface material layer includes a first segment between the first and second semiconductor structures and a second segment protruding beyond the second sidewall. A first distance from a top surface of the first substrate to a lowest point of a bottom surface of the first segment is less than a second distance from the top surface of the first substrate to a lowest point of a bottom surface of the second segment.