公开(公告)号：US10970452B2

公开(公告)日：2021-04-06

申请号：US16795947

申请日：2020-02-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyounghwan Lim ,  Hyungock Kim ,  Heeyeon Kim ,  Dongkwan Han

IPC: G06F30/392

Abstract: Provided are a system for designing a semiconductor circuit and an operating method of the same. The system includes a working memory loading a clustering application for generating a cluster, based on instances respectively corresponding to cells of the semiconductor circuit, and loading a design tool for placing the cells. The clustering application, when an output terminal of a first instance is connected to a second instance and the number of instances connected to the output terminal of the first instance is one, classifies the first instance and the second instance into a candidate group pair. The clustering application, when all instances connected to an input terminal of the second instance are classified into the candidate group pair with the second instance, generates the cluster including the first instance and the second instance.

公开(公告)号：US20240318307A1

公开(公告)日：2024-09-26

申请号：US18611936

申请日：2024-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byunghwan Kong ,  Heesun Song ,  Seongwan Kim ,  Heeyeon Kim ,  Seongho Park ,  Hyunho Choi

IPC: C23C16/44

CPC classification number: C23C16/4412 ,  H01L21/67017

Abstract: Provided is a substrate processing device including a first tube configured to load a substrate in an interior space thereof, a second tube configured to include the first tube therein, and a process gas supply line configured to inject process gas to the interior space of the first tube, wherein the first tube has a plurality of exhaust holes penetrating a sidewall of the first tube, the plurality of exhaust holes include a main exhaust hole and a multi-exhaust hole region disposed in a line in the vertical direction, the multi-exhaust hole region includes a plurality of auxiliary exhaust holes, and the height of each of the plurality of auxiliary exhaust holes is less than the height of the main exhaust hole.

公开(公告)号：US12230514B2

公开(公告)日：2025-02-18

申请号：US17499988

申请日：2021-10-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byunghwan Kong ,  Heeyeon Kim ,  Homin Son ,  Geunkyu Choi

IPC: H01L21/67

Abstract: A substrate processing method includes: disposing a wafer in a wafer region of a tube; injecting an inert gas into a gap region, of the tube, between an inner side wall of the tube and the wafer disposed in the wafer region; and injecting a process gas into the wafer region of the tube, wherein a pressure of the gap region of the tube is higher than a pressure at an edge of the wafer region of the tube during the injection of the inert gas and the process gas.