公开(公告)号：US20230190566A1

公开(公告)日：2023-06-22

申请号：US18110460

申请日：2023-02-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Segon ROH ,  Wanku KANG ,  Sangho LEE ,  Ho LEE ,  Seungil HAN

IPC: A61H3/00 ,  A61H1/02

CPC classification number: A61H3/00 ,  A61H1/0244 ,  A61H1/0281 ,  A61H2201/1215 ,  A61H2201/149 ,  A61H2201/165 ,  A61H2201/1472

Abstract: A wearable device may include a proximal support configured to support a proximal part (e.g., waist) of a user, a distal support configured to support a distal part (e.g., thigh) of the user, a driving assembly which is connected to the proximal support and configured to generate power, and a driving frame configured to transmit the force from the driving assembly to the distal support. The driving assembly may include a housing which is connected to the proximal support, an actuator including a stator which is fixed to the housing and has a ring shape and a rotor which is located inside the stator and rotatable relative to the stator, a speed reducer which is inserted inside the rotor and includes an input end which is connected to an output end of the actuator, and a supporting part configured to support the speed reducer and connected detachably to the housing.

公开(公告)号：US20130344664A1

公开(公告)日：2013-12-26

申请号：US13973584

申请日：2013-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-Wook MOON ,  Joong S. JEON ,  Jung-hyun LEE ,  Nae-In LEE ,  Yeon-Sik PARK ,  Hwa-Sung RHEE ,  Ho LEE ,  Se-Young CHO ,  Suk-Pil KIM

IPC: H01L29/66

CPC classification number: H01L29/66439 ,  B82Y10/00 ,  B82Y15/00 ,  H01L21/02365 ,  H01L21/02601 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/1033 ,  H01L29/66742 ,  H01L29/7839 ,  H01L29/78684 ,  H01L29/78696 ,  H01L51/426 ,  H01L2221/1094

Abstract: A field effect transistor having at least one Ge nanorod and a method of manufacturing the field effect transistor are provided. The field effect transistor may include a gate oxide layer formed on a silicon substrate, at least one nanorod embedded in the gate oxide layer having both ends thereof exposed, a source electrode and a drain electrode connected to opposite sides of the at least one Ge nanorod, and a gate electrode formed on the gate oxide layer between the source electrode and the drain electrode.

Abstract translation: 提供具有至少一个Ge纳米棒的场效应晶体管和制造场效应晶体管的方法。 场效应晶体管可以包括形成在硅衬底上的栅氧化层，至少一个纳米棒嵌入在其两端被暴露的栅极氧化层中，源电极和漏极连接到至少一个Ge纳米棒的相对侧 以及形成在源电极和漏电极之间的栅氧化层上的栅电极。