公开(公告)号：US20130344664A1

公开(公告)日：2013-12-26

申请号：US13973584

申请日：2013-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-Wook MOON ,  Joong S. JEON ,  Jung-hyun LEE ,  Nae-In LEE ,  Yeon-Sik PARK ,  Hwa-Sung RHEE ,  Ho LEE ,  Se-Young CHO ,  Suk-Pil KIM

IPC: H01L29/66

CPC classification number: H01L29/66439 ,  B82Y10/00 ,  B82Y15/00 ,  H01L21/02365 ,  H01L21/02601 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/1033 ,  H01L29/66742 ,  H01L29/7839 ,  H01L29/78684 ,  H01L29/78696 ,  H01L51/426 ,  H01L2221/1094

Abstract: A field effect transistor having at least one Ge nanorod and a method of manufacturing the field effect transistor are provided. The field effect transistor may include a gate oxide layer formed on a silicon substrate, at least one nanorod embedded in the gate oxide layer having both ends thereof exposed, a source electrode and a drain electrode connected to opposite sides of the at least one Ge nanorod, and a gate electrode formed on the gate oxide layer between the source electrode and the drain electrode.

Abstract translation: 提供具有至少一个Ge纳米棒的场效应晶体管和制造场效应晶体管的方法。 场效应晶体管可以包括形成在硅衬底上的栅氧化层，至少一个纳米棒嵌入在其两端被暴露的栅极氧化层中，源电极和漏极连接到至少一个Ge纳米棒的相对侧 以及形成在源电极和漏电极之间的栅氧化层上的栅电极。

公开(公告)号：US20130130478A1

公开(公告)日：2013-05-23

申请号：US13737411

申请日：2013-01-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang-Soo SEOL ,  Yoon-dong PARK ,  Suk-Pil KIM

IPC: H01L29/792

CPC classification number: H01L29/7926 ,  G11C16/0483 ,  G11C16/10 ,  H01L27/0688 ,  H01L27/11517 ,  H01L27/11556 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/792

Abstract: A multi-layered non-volatile memory device and a method of manufacturing the same. The non-volatile memory device may include a plurality of first semiconductor layers having a stack structure. A plurality of control gate electrodes may extend across the first semiconductor layers. A first body contact layer may extend across the first semiconductor layers. A plurality of charge storage layers may be interposed between the control gate electrodes and the first semiconductor layers.

Abstract translation: 一种多层非易失性存储器件及其制造方法。 非易失性存储器件可以包括具有堆叠结构的多个第一半导体层。 多个控制栅电极可以跨越第一半导体层延伸。 第一体接触层可以跨越第一半导体层延伸。 可以在控制栅电极和第一半导体层之间插入多个电荷存储层。