公开(公告)号：US11984421B2

公开(公告)日：2024-05-14

申请号：US17228111

申请日：2021-04-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunseok Song ,  Hongjoo Baek ,  Kyungsuk Oh ,  Manho Lee ,  Hyuekjae Lee

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/48 ,  H01L23/528

CPC classification number: H01L24/24 ,  H01L23/3157 ,  H01L23/481 ,  H01L23/5286 ,  H01L2224/24265 ,  H01L2924/19041

Abstract: An integrated circuit chip includes a substrate having an active surface and a back surface opposite to the active surface; a front-end-of-line (FEOL) structure disposed on the active surface of the substrate; a first back-end-of-line (BEOL) structure disposed on the FEOL structure; an intermediate connection layer disposed under the back surface of the substrate, the intermediate connection layer including a charge storage, and metal posts disposed around the charge storage; and a re-distribution structure layer disposed under the intermediate connection layer.

公开(公告)号：US20220139863A1

公开(公告)日：2022-05-05

申请号：US17228111

申请日：2021-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunseok Song ,  Hongjoo Baek ,  Kyungsuk Oh ,  Manho Lee ,  Hyuekjae Lee

IPC: H01L23/00 ,  H01L23/528 ,  H01L23/48 ,  H01L23/31

Abstract: An integrated circuit chip includes a substrate having an active surface and a back surface opposite to the active surface; a front-end-of-line (FEOL) structure disposed on the active surface of the substrate; a first back-end-of-line (BEOL) structure disposed on the FEOL structure; an intermediate connection layer disposed under the back surface of the substrate, the intermediate connection layer including a charge storage, and metal posts disposed around the charge storage; and a re-distribution structure layer disposed under the intermediate connection layer.