公开(公告)号：US11683992B2

公开(公告)日：2023-06-20

申请号：US17134456

申请日：2020-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungjong Jeong ,  Ki Woong Kim ,  Younghyun Kim ,  Junghwan Park ,  Byoungjae Bae ,  Se Chung Oh ,  Jungmin Lee ,  Kyungil Hong

IPC: H10N50/80 ,  H10N50/01 ,  H10B61/00 ,  H01L43/02 ,  H01L43/12 ,  H01L27/22

CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L43/12

Abstract: A magnetic memory device may include an interlayer insulating layer on a substrate, a bottom electrode contact disposed in the interlayer insulating layer, and a magnetic tunnel junction pattern on the bottom electrode contact. The bottom electrode contact may include a second region and a first region, which are sequentially disposed in a first direction perpendicular to a top surface of the substrate so that the second region is between the first region and the top surface of the substrate. A first width of the first region may be smaller than a second width of the second region, when measured in a second direction parallel to the top surface of the substrate.