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    Memory device and an operating method thereof
    1.
    发明授权
    Memory device and an operating method thereof 有权

    公开(公告)号：US11551729B2

    公开(公告)日：2023-01-10

    申请号：US17215914

    申请日：2021-03-29

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sangyun Kim ,  Kyungryun Kim ,  Junghwan Park ,  Yeonkyu Choi

    IPC: G11C11/34 ,  G11C5/14 ,  G11C7/22 ,  G11C7/06

    Abstract: A memory device includes: a first circuit; a second circuit; and an adaptive body bias generator configured to receive frequency detection information or temperature detection information, to apply a first forward body bias or a first reverse body bias to the first circuit in response to the frequency detection information or the temperature detection information, and to apply a second forward body bias or a second reverse body bias to the second circuit in response to the frequency detection information or the temperature detection information.

    MAGNETIC DEVICE
    2.
    发明申请
    MAGNETIC DEVICE 有权

    公开(公告)号：US20220130581A1

    公开(公告)日：2022-04-28

    申请号：US17350157

    申请日：2021-06-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Younghyun Kim ,  Sechung Oh ,  Naoki Hase ,  Heeju Shin ,  Junghwan Park

    IPC: H01F10/32 ,  H01L43/02 ,  H01L27/22

    Abstract: A magnetic device includes a fixed layer including a fixed pattern, a free layer, and a tunnel barrier between the fixed layer and the free layer. The fixed pattern includes a first magnetic pattern, a second magnetic pattern, and a hybrid spacer, including a nonmagnetic material layer, between the first magnetic pattern and the second magnetic pattern, the nonmagnetic material including a plurality of magnetic nanoparticles dispersed therein.

    Semiconductor devices comprising crack preventing layers and data storage systems including the same
    5.
    发明授权
    Semiconductor devices comprising crack preventing layers and data storage systems including the same 有权

    公开(公告)号：US12185543B2

    公开(公告)日：2024-12-31

    申请号：US17742043

    申请日：2022-05-11

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sanghun Chun ,  Kwangyoung Jung ,  Youngji Noh ,  Junghwan Park ,  Jeehoon Han

    IPC: H10B43/27 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/35

    Abstract: A semiconductor device includes a substrate, gate electrodes stacked and spaced apart from each other in a first direction perpendicular to an upper surface of the substrate, channel structures penetrating the gate electrodes, extending in the first direction, and each including a channel layer, separation regions penetrating the gate electrodes, extending in the first direction and a second direction perpendicular to the first direction, and spaced apart from each other in a third direction perpendicular to the first direction and the second direction, and crack prevention layers disposed on at least a portion of the separation regions, wherein each of the separation regions includes a lower region and upper regions spaced apart from each other in the second direction on the lower region and protruding upwardly from the lower region, and wherein the crack prevention layers are in contact with upper surfaces of the upper regions.

    Environmental configuration for improving wireless communication performance
    6.
    发明授权
    Environmental configuration for improving wireless communication performance 有权

    公开(公告)号：US09860741B2

    公开(公告)日：2018-01-02

    申请号：US14972509

    申请日：2015-12-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jongheon Kim ,  Cheehwan Yang ,  Jangsun Yoo ,  Junghwan Park

    IPC: H04W24/00 ,  H04W8/22

    CPC classification number: H04W8/22

    Abstract: An electronic device and method are disclosed. The electronic device includes a wireless communication unit that performs wireless communication, a display unit, and at least one processor, which implements the method, including in response to detecting a request to enter a wireless communication maximization mode, controlling the display unit to display an option for configuring the wireless communication maximization mode, detecting a selection input to the option, and changing a configuration of at least one component of the electronic device to reduce noise from the at least one component generated in a wireless communication frequency band according to the selected option.

    Magnetic memory device and method of fabricating the same
    7.
    发明授权
    Magnetic memory device and method of fabricating the same 有权

    公开(公告)号：US12262641B2

    公开(公告)日：2025-03-25

    申请号：US17466246

    申请日：2021-09-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyungil Hong ,  Jungmin Lee ,  Younghyun Kim ,  Junghwan Park ,  Heeju Shin ,  Se Chung Oh

    IPC: H10N50/10 ,  G11C11/16 ,  H10B61/00 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85

    Abstract: A method of fabricating a magnetic memory device comprises forming, on a substrate, a data storage structure including a bottom electrode, a magnetic tunnel junction pattern, and a top electrode, forming a first capping dielectric layer conformally covering lateral and top surfaces of the data storage structure, and forming a second capping dielectric layer on the first capping dielectric layer. The forming the first capping dielectric layer is performed by PECVD in which a first source gas, a first reaction gas, and a first purging gas are supplied. The forming the second capping dielectric layer Is performed by PECVD in which a second source gas, a second reaction gas, and a second purging gas are supplied. The first and second reaction gases are different from each other. The first and second purging gases are different from each other.

    Method of manufacturing a magnetoresistive random access memory device
    9.
    发明授权
    Method of manufacturing a magnetoresistive random access memory device 有权

    公开(公告)号：US11329219B2

    公开(公告)日：2022-05-10

    申请号：US16840741

    申请日：2020-04-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jungmin Lee ,  Younghyun Kim ,  Junghwan Park ,  Sechung Oh ,  Kyungil Hong

    IPC: H01L43/12 ,  H01L27/22 ,  H01L21/02 ,  H01L43/08

    Abstract: In a method of manufacturing a magnetoresistive random access memory, a memory structure may be formed on a substrate. The memory structure may include a lower electrode, a magnetic tunnel junction (MTJ) structure, and an upper electrode sequentially stacked. A protection layer including silicon nitride may be formed to cover a surface of the memory structure. The protection layer may be formed by a chemical vapor deposition process using plasma and introducing deposition gases including a silicon source gas, a nitrogen source gas containing no hydrogen and a dissociation gas. Damages of the MTJ structure may be decreased during forming the protection layer. Thus, the MRAM may have improved characteristics.

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