公开(公告)号：US12150768B2

公开(公告)日：2024-11-26

申请号：US17370373

申请日：2021-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Injo Jeong ,  Hyunguk Yoo ,  Seongwook Jo ,  Younghyun Kim ,  Suho Lee

IPC: A61B5/265 ,  A61B5/00 ,  H01B1/02 ,  H05K5/00 ,  H05K5/03 ,  H05K7/14

Abstract: An electronic device is provided. The electronic device includes a housing, a display viewed through at least a portion of a front surface of the housing, a rear cover disposed on a rear surface of the housing, a first electrode disposed on a lateral surface of the housing, and second and third electrodes disposed at different positions on the rear cover. The first electrode, the second electrode, and the third electrode may include a conductive material that is a compound containing titanium (Ti), aluminum (Al), chromium (Cr), silicon (Si), carbon (C), and nitrogen (N).

公开(公告)号：US11683992B2

公开(公告)日：2023-06-20

申请号：US17134456

申请日：2020-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungjong Jeong ,  Ki Woong Kim ,  Younghyun Kim ,  Junghwan Park ,  Byoungjae Bae ,  Se Chung Oh ,  Jungmin Lee ,  Kyungil Hong

IPC: H10N50/80 ,  H10N50/01 ,  H10B61/00 ,  H01L43/02 ,  H01L43/12 ,  H01L27/22

CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L43/12

Abstract: A magnetic memory device may include an interlayer insulating layer on a substrate, a bottom electrode contact disposed in the interlayer insulating layer, and a magnetic tunnel junction pattern on the bottom electrode contact. The bottom electrode contact may include a second region and a first region, which are sequentially disposed in a first direction perpendicular to a top surface of the substrate so that the second region is between the first region and the top surface of the substrate. A first width of the first region may be smaller than a second width of the second region, when measured in a second direction parallel to the top surface of the substrate.

公开(公告)号：US11600662B2

公开(公告)日：2023-03-07

申请号：US17582628

申请日：2022-01-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghwan Park ,  Younghyun Kim ,  Se Chung Oh ,  Jungmin Lee ,  Kyungil Hong

IPC: H01L27/22 ,  H01L43/10 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02 ,  H01L43/04 ,  H01L43/06

Abstract: Data storage devices are provided. A data storage device includes a memory transistor on a substrate and a data storage structure electrically connected to the memory transistor. The data storage structure includes a magnetic tunnel junction pattern and a top electrode on the magnetic tunnel junction pattern. The top electrode includes a first top electrode and a second top electrode on the first top electrode, and the first and second top electrodes include the same metal nitride. The first top electrode includes first crystal grains of the metal nitride, and the second top electrode includes second crystal grains of the metal nitride. In a section of the top electrode, the number of the first crystal grains per a unit length is greater than the number of the second crystal grains per the unit length.

公开(公告)号：US11271037B2

公开(公告)日：2022-03-08

申请号：US16803574

申请日：2020-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghwan Park ,  Younghyun Kim ,  Se Chung Oh ,  Jungmin Lee ,  Kyungil Hong

IPC: H01L27/22 ,  H01L43/10 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02

Abstract: Data storage devices are provided. A data storage device includes a memory transistor on a substrate and a data storage structure electrically connected to the memory transistor. The data storage structure includes a magnetic tunnel junction pattern and a top electrode on the magnetic tunnel junction pattern. The top electrode includes a first top electrode and a second top electrode on the first top electrode, and the first and second top electrodes include the same metal nitride. The first top electrode includes first crystal grains of the metal nitride, and the second top electrode includes second crystal grains of the metal nitride. In a section of the top electrode, the number of the first crystal grains per a unit length is greater than the number of the second crystal grains per the unit length.

公开(公告)号：US11245951B2

公开(公告)日：2022-02-08

申请号：US16959340

申请日：2018-12-19

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Sungmin Lim ,  Changwon Choi ,  Sumin Kim ,  Younghyun Kim ,  Youngin Park ,  Hanjin Park ,  Seockyoung Shim ,  Taehoon Lee

IPC: G06F3/0483 ,  H04N21/431 ,  G06F3/0482 ,  H04N21/4782

Abstract: The disclosure provides a display device and a content providing method thereof. The content providing method of the display device includes: displaying a list including a plurality of web pages pre-selected by a user; and displaying, in case that a user command for selecting one of the plurality of web pages is input, a reconstructed content obtained by reconstructing the selected web page based on a type of the selected web page.

公开(公告)号：US10804458B2

公开(公告)日：2020-10-13

申请号：US16242555

申请日：2019-01-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  SAMSUNG ELECTRONICS, CO., LTD.

Inventor： Guohan Hu ,  Younghyun Kim ,  Chandrasekara Kothandaraman ,  Jeong-Heon Park

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02

Abstract: Memory devices and methods of forming the same include forming a memory stack over a bottom electrode. The memory stack has a free magnetic layer formed on the tunnel barrier layer. A first boron-segregating layer is formed directly on the free magnetic layer. An anneal is performed to cause boron to leave the free magnetic layer at an interface with the first boron-segregating layer. A top electrode is formed over the memory stack.

公开(公告)号：US10256399B2

公开(公告)日：2019-04-09

申请号：US15157834

申请日：2016-05-18

Applicant: International Business Machines Corporation ,  Samsung Electronics Co., Ltd.

Inventor： Guohan Hu ,  Kwangseok Kim ,  Younghyun Kim ,  Jung-Hyuk Lee ,  Jeong-Heon Park

IPC: H01L43/12 ,  H01L43/10

Abstract: A method for manufacturing a semiconductor device includes forming a magnetic tunnel junction (MTJ) structure comprising a magnetic fixed layer, a non-magnetic barrier layer and a magnetic free layer, and forming a metal oxide cap layer on the MTJ structure, wherein forming the metal oxide cap layer comprises depositing a metal layer on the magnetic free layer, performing an oxidation of the deposited metal layer to form an oxidized metal layer, and depositing a metal oxide layer on the oxidized metal layer.

公开(公告)号：US12029134B2

公开(公告)日：2024-07-02

申请号：US17402960

申请日：2021-08-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghwan Park ,  Younghyun Kim ,  Jaehoon Kim ,  Heeju Shin ,  Sechung Oh

IPC: H10N50/85 ,  H01L23/522 ,  H01L23/528 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80

CPC classification number: H10N50/10 ,  H01L23/5226 ,  H01L23/5283 ,  H10B61/22 ,  H10N50/80 ,  H10N50/85

Abstract: A semiconductor device including a substrate; a lower electrode on the substrate; a magnetic tunnel junction structure on the lower electrode, the magnetic tunnel junction structure including a pinned layer, a tunnel barrier layer, and a free layer which are sequentially stacked; an upper electrode on the magnetic tunnel junction structure; and an oxidation control layer between the free layer and the upper electrode, the oxidation control layer including at least one filter layer and at least one oxide layer, wherein the at least one filter layer includes MoCoFe.

公开(公告)号：US11963292B2

公开(公告)日：2024-04-16

申请号：US17406535

申请日：2021-08-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Injo Jeong ,  Jeahyuck Lee ,  Hyunguk Yoo ,  Inho Yun ,  Seongwook Jo ,  Younghyun Kim ,  Eungi Min ,  Suho Lee

IPC: H05K1/02 ,  G04G17/04 ,  G04G17/06 ,  G04G17/08

CPC classification number: H05K1/0274 ,  G04G17/04 ,  G04G17/08 ,  G04G17/06 ,  H05K2201/10106

Abstract: An electronic device is provided. The electronic device includes a printed circuit board, a light emitting unit and a light receiving unit which are disposed on the printed circuit board, a cover member which has at least a partial region configured by a material having high optical transmittance, is disposed to face the printed circuit board, and includes a first region substantially facing the light emitting unit, and a second region substantially facing the light receiving unit, and a pattern disposed in at least one of the first region and the second region of the cover member. The pattern may be disposed by repeatedly arranging blocking units having low transmittance at a predetermined interval. In addition, various embodiments may be possible.

公开(公告)号：US11935677B2

公开(公告)日：2024-03-19

申请号：US17350157

申请日：2021-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younghyun Kim ,  Sechung Oh ,  Naoki Hase ,  Heeju Shin ,  Junghwan Park

IPC: H01F10/32 ,  G11C11/16 ,  H01F1/00 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

CPC classification number: H01F10/3254 ,  H01F1/0063 ,  H01F10/3272 ,  H01F10/329 ,  H10B61/22 ,  H10N50/10 ,  H10N50/80 ,  G11C11/161 ,  H10N50/85

Abstract: A magnetic device includes a fixed layer including a fixed pattern, a free layer, and a tunnel barrier between the fixed layer and the free layer. The fixed pattern includes a first magnetic pattern, a second magnetic pattern, and a hybrid spacer, including a nonmagnetic material layer, between the first magnetic pattern and the second magnetic pattern, the nonmagnetic material including a plurality of magnetic nanoparticles dispersed therein.