公开(公告)号：US20160260635A1

公开(公告)日：2016-09-08

申请号：US15155478

申请日：2016-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Won HONG ,  Hei-Seung KIM ,  Kyoung-Hee NAM ,  In-Sun PARK ,  Jong-Myeong LEE

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/288

CPC classification number: H01L21/76879 ,  H01L21/2885 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76861 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76882 ,  H01L23/53238 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/11529 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a metal pattern filling a trench formed through at least a portion of an insulating interlayer on a substrate and including copper, and a wetting improvement layer pattern in the metal pattern including at least one of tantalum, tantalum nitride, titanium, titanium nitride, ruthenium, cobalt and manganese.