公开(公告)号：US20160260635A1

公开(公告)日：2016-09-08

申请号：US15155478

申请日：2016-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Won HONG ,  Hei-Seung KIM ,  Kyoung-Hee NAM ,  In-Sun PARK ,  Jong-Myeong LEE

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/288

CPC classification number: H01L21/76879 ,  H01L21/2885 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76861 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76882 ,  H01L23/53238 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/11529 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a metal pattern filling a trench formed through at least a portion of an insulating interlayer on a substrate and including copper, and a wetting improvement layer pattern in the metal pattern including at least one of tantalum, tantalum nitride, titanium, titanium nitride, ruthenium, cobalt and manganese.

公开(公告)号：US20160027896A1

公开(公告)日：2016-01-28

申请号：US14669221

申请日：2015-03-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Su LEE ,  Young-Wook PARK ,  Hee-Sook PARK ,  Dong-Bok LEE ,  Jong-Myeong LEE

IPC: H01L29/66 ,  H01L21/311 ,  H01L21/288 ,  H01L21/02 ,  H01L21/768 ,  H01L21/285

CPC classification number: H01L21/31111 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/288 ,  H01L21/76816 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76855 ,  H01L21/76879 ,  H01L21/76895 ,  H01L27/10855 ,  H01L29/4236 ,  H01L29/78

Abstract: Semiconductor devices, and methods for fabricating a semiconductor device, include forming a contact hole penetrating an interlayer insulating layer and exposing a conductor defining a bottom surface of the contact hole, forming a sacrificial layer filling the contact hole, forming a first trench overlapping a part of the contact hole by removing at least a part of the sacrificial layer, forming a spacer filling the first trench, forming a second trench by removing a remainder of the sacrificial layer, and forming a metal electrode filling the contact hole and the second trench using electroless plating.

Abstract translation: 半导体器件以及半导体器件的制造方法包括：形成贯穿层间绝缘层的接触孔，露出限定接触孔的底面的导体，形成填充接触孔的牺牲层，形成与第一沟槽重叠的部分 通过去除所述牺牲层的至少一部分，形成填充所述第一沟槽的间隔物，通过去除所述牺牲层的剩余部分形成第二沟槽，以及使用以下方式形成填充所述接触孔和所述第二沟槽的金属电极： 无电镀。