公开(公告)号：US20240321991A1

公开(公告)日：2024-09-26

申请号：US18503019

申请日：2023-11-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ingeon Hwang ,  Jinbum Kim ,  Hyojin Kim ,  Sangmoon Lee ,  Yongjun Nam ,  Taehyung Lee

IPC: H01L29/423 ,  H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/42392 ,  H01L27/088 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/78696

Abstract: An integrated circuit device includes a fin-type active region on a substrate, a nanosheet on a fin top surface of the fin-type active region, the nanosheet being apart from the fin top surface of the fin-type active region in a vertical direction, a gate line surrounding the nanosheet on the fin-type active region, and a source/drain region on the fin-type active region, the source/drain region being in contact with the nanosheet, wherein the nanosheet includes a multilayered sheet comprising a first outer semiconductor sheet, a core semiconductor sheet, and a second outer semiconductor sheet, which are sequentially stacked in the vertical direction.

公开(公告)号：US20240170554A1

公开(公告)日：2024-05-23

申请号：US18511553

申请日：2023-11-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyojin Kim ,  Jinbum Kim ,  Sangmoon Lee ,  Dongwoo Kim ,  Sungmin Kim ,  Yongjun Nam ,  Ingeon Hwang

IPC: H01L29/423 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/42392 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device is provided. The semiconductor device includes: an active pattern extending in a first direction on a substrate; channel layers arranged on the active pattern; a gate structure crossing the active pattern, and surrounding the plurality of channel layers, the gate structure extending in a second direction that crosses the first direction; and source/drain regions provided on the active pattern on both sides of the gate structure, and including a first epitaxial layer connected to each of side surfaces of the channel layers, and a second epitaxial layer provided on the first epitaxial layer and having a composition different from that of the first epitaxial layer. Each of the side surfaces of the plurality of channel layers has a crystal plane of (111) or (100). The first epitaxial layer extends in the second direction and has a first thickness in the first direction that is substantially constant.

公开(公告)号：US20240322039A1

公开(公告)日：2024-09-26

申请号：US18421001

申请日：2024-01-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyojin Kim ,  Jinbum Kim ,  Sangmoon Lee ,  Yongjun Nam ,  Ingeon Hwang

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/7848 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/775 ,  H01L29/78696 ,  H01L29/42392

Abstract: The integrated circuit device includes a fin-type active region extending in a first direction, a channel region on the fin-type active region, a gate line on the channel region and extending in a second direction, and a source/drain region on the fin-type active region and in contact with the channel region, wherein the source/drain region includes a plurality of semiconductor layers including a first semiconductor layer that includes a portion in contact with the channel region and a portion in contact with the fin-type active region, a second semiconductor layer on the first semiconductor layer, and a third semiconductor layer on the second semiconductor layer, a germanium (Ge) content ratio in the first semiconductor layer is greater than or equal to 10 at % and less than 100 at %, and the Ge content ratio in the first semiconductor layer decreases towards a boundary with the second semiconductor layer.