Methods of Forming Semiconductor Devices Having Narrow Conductive Line Patterns
    1.
    发明申请
    Methods of Forming Semiconductor Devices Having Narrow Conductive Line Patterns 有权
    形成具有窄导电线图案的半导体器件的方法

    公开(公告)号:US20130040452A1

    公开(公告)日:2013-02-14

    申请号:US13652550

    申请日:2012-10-16

    Abstract: Semiconductor devices and methods of forming semiconductor devices are provided in which a plurality of patterns are simultaneously formed to have different widths and the pattern densities of some regions are increased using double patterning. The semiconductor device includes a plurality of conductive lines each including a first line portion and a second line portion, where the first line portion extends on a substrate in a first direction, the second line portion extends from one end of the first line portion in a second direction, and the first direction is different from the second direction; a plurality of contact pads each of which is connected with a respective conductive line of the plurality of conductive lines via the second line portion of the corresponding conductive line; and a plurality of dummy conductive lines each including a first dummy portion extending from a respective contact pad of the plurality of contact pads, in parallel with the corresponding second line portion in the second direction.

    Abstract translation: 提供形成半导体器件的半导体器件和方法,其中同时形成多个图案以具有不同的宽度,并且使用双重图案化来增加一些区域的图案密度。 半导体器件包括多个导线,每条导线包括第一线部分和第二线部分,其中第一线部分在第一方向上在衬底上延伸,第二线部分从第一线部分的一端延伸到 第二方向,第一方向与第二方向不同; 多个接触焊盘,每个接触焊盘经由相应的导线的第二线部分与多条导线的相应导线连接; 以及多个虚设导电线,每个虚设导电线包括从所述多个接触焊盘的相应的接触焊盘延伸的第一虚设部分,与所述第二方向上的对应的第二线部分平行。

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