公开(公告)号：US20230020176A1

公开(公告)日：2023-01-19

申请号：US17840819

申请日：2022-06-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeseoung Park ,  Wandon Kim ,  Suyoung Bae ,  Dongsoo Lee ,  Dongsuk Shin ,  Doyoung Choi

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/49 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/66

Abstract: A semiconductor device includes a substrate including first and second regions, first and second active patterns provided on the first and second regions, respectively, a pair of first source/drain patterns on the first active pattern and a first channel pattern therebetween, a pair of second source/drain patterns on the second active pattern and a second channel pattern therebetween, first and second gate electrodes respectively provided on the first and second channel patterns, and first and second gate insulating layers respectively interposed between the first and second channel patterns and the first and second gate electrodes. Each of the first and second gate insulating layers includes an interface layer and a first high-k dielectric layer thereon, and the first gate insulating layer further includes a second high-k dielectric layer on the first high-k dielectric layer.

公开(公告)号：US20240222451A1

公开(公告)日：2024-07-04

申请号：US18243818

申请日：2023-09-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wandon Kim ,  Jaeseoung Park ,  Hyunwoo Kim ,  Hyunbae Lee ,  Jeonghyuk Yim ,  Hyoseok Choi

IPC: H01L29/417 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/41733 ,  H01L29/0673 ,  H01L29/41775 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device includes an active region extending in a first direction, a gate structure extending in a second direction, a source/drain region on the active region, a first contact structure connected to the source/drain region, and a second contact structure connected to the first contact structure. The second contact structure includes a first layer including a first grain and a second layer including second grains on the first layer. Within the first layer, a maximum vertical distance between a lowermost end of the first grain and an uppermost end of the first grain is equal to a vertical distance between a lowermost end of the first layer and an uppermost end of the first layer. A size of the first grain is greater than a size of each of the second grains. A width of the first layer is greater than a width of the first contact structure.

公开(公告)号：US12262558B2

公开(公告)日：2025-03-25

申请号：US17840819

申请日：2022-06-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaeseoung Park ,  Wandon Kim ,  Suyoung Bae ,  Dongsoo Lee ,  Dongsuk Shin ,  Doyoung Choi

IPC: H10D84/85 ,  H01L21/02 ,  H10D30/01 ,  H10D30/67 ,  H10D30/69 ,  H10D62/10 ,  H10D64/01 ,  H10D84/01 ,  H10D84/03

Abstract: A semiconductor device includes a substrate including first and second regions, first and second active patterns provided on the first and second regions, respectively, a pair of first source/drain patterns on the first active pattern and a first channel pattern therebetween, a pair of second source/drain patterns on the second active pattern and a second channel pattern therebetween, first and second gate electrodes respectively provided on the first and second channel patterns, and first and second gate insulating layers respectively interposed between the first and second channel patterns and the first and second gate electrodes. Each of the first and second gate insulating layers includes an interface layer and a first high-k dielectric layer thereon, and the first gate insulating layer further includes a second high-k dielectric layer on the first high-k dielectric layer.