公开(公告)号：US20200303182A1

公开(公告)日：2020-09-24

申请号：US16892478

申请日：2020-06-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-Ho JANG ,  Jeong-Yong BAE ,  Woo-Young KIM ,  Hyun-Jung LEE ,  Se-Jin PARK ,  Yong-Sun KO ,  Dong-Gyun HAN ,  Woo-Gwan SHIM ,  Boong KIM

IPC: H01L21/02 ,  H01L21/67 ,  B08B7/00 ,  H01L21/687

Abstract: A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.

公开(公告)号：US20180190485A1

公开(公告)日：2018-07-05

申请号：US15826916

申请日：2017-11-30

Applicant: Samsung Electronics Co., Ltd

Inventor： Won-Ho JANG ,  Hyun-Jung LEE ,  Se-Jin PARK ,  Yong-Sun KO ,  Dong-Gyun HAN ,  Woo-Gwan SHIM ,  Jeong-Yong BAE ,  Woo-Young KIM ,  Boong KIM

IPC: H01L21/02 ,  H01L21/67 ,  B08B7/00

CPC classification number: H01L21/02101 ,  B08B3/08 ,  B08B7/0021 ,  B08B2203/007 ,  H01L21/67017 ,  H01L21/67034 ,  H01L21/67103 ,  H01L21/6719 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/68742 ,  H01L21/6875

Abstract: A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.