公开(公告)号：US20160035788A1

公开(公告)日：2016-02-04

申请号：US14659806

申请日：2015-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Kuk KIM ,  Young-Wook PARK ,  Jeon-Il LEE ,  Hyun-Jung LEE

IPC: H01L27/22 ,  H01L29/66 ,  H01L43/12 ,  H01L29/423 ,  H01L29/45 ,  H01L43/08 ,  H01L21/8234 ,  H01L27/108

CPC classification number: H01L27/228 ,  H01L21/28518 ,  H01L21/76897 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10885 ,  H01L29/4236 ,  H01L29/456 ,  H01L29/665 ,  H01L29/66621 ,  H01L43/08 ,  H01L43/12

Abstract: Active patterns spaced apart from each other by an isolation layer are formed in a substrate. Gate structures extending in the isolation layer through the active patterns are formed. Each active pattern is divided into a central portion and a peripheral portion facing the central portion by the gate structures. A protrusion of at least one of active pattern is formed. The protrusion is exposed from a top surface of the isolation layer, and transformed into silicide such that a first silicide ohmic pad is formed at the central portion of the active pattern and a second silicide ohmic pad is formed at the peripheral portion of the active pattern. A conductive line structure electrically connected to the first silicide ohmic pad is formed. A conductive contact electrically connected to the second silicide ohmic pad is formed. A data storage unit electrically connected to the conductive contact is formed.

Abstract translation: 在衬底中形成通过隔离层彼此间隔开的有源图案。 形成通过有源图案在隔离层中延伸的门结构。 每个活动图案被门结构分成中心部分和面向中心部分的周边部分。 形成有源图案中的至少一个的突起。 突起从隔离层的顶表面露出，并转变为硅化物，使得在有源图案的中心部分处形成第一硅化物欧姆垫，并且在活性图案的周边部分形成第二硅化物欧姆垫 。 形成电连接到第一硅化物欧姆垫的导电线结构。 形成电连接到第二硅化物欧姆垫的导电接触。 形成与导体接触部电连接的数据存储部。

公开(公告)号：US20190013401A1

公开(公告)日：2019-01-10

申请号：US16128152

申请日：2018-09-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min KIM ,  Kyung-Seok OH ,  Cheol KIM ,  Heon-Jong SHIN ,  Jong-Ryeol YOO ,  Hyun-Jung LEE ,  Seong-Hoon JEONG

IPC: H01L29/78 ,  H01L27/12 ,  H01L21/84 ,  H01L29/66

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a lower fin that protrudes from a substrate and extends in a first direction, an oxide film the lower fin, an upper fin that protrudes from the oxide film and that is spaced apart from the lower fin at a position corresponding to the lower fin, and a gate structure the upper fin that extends in a second direction to intersect the upper fin, wherein germanium (Ge) is included in a portion of the oxide film located between the lower fin and the upper fin.

公开(公告)号：US20200303182A1

公开(公告)日：2020-09-24

申请号：US16892478

申请日：2020-06-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-Ho JANG ,  Jeong-Yong BAE ,  Woo-Young KIM ,  Hyun-Jung LEE ,  Se-Jin PARK ,  Yong-Sun KO ,  Dong-Gyun HAN ,  Woo-Gwan SHIM ,  Boong KIM

IPC: H01L21/02 ,  H01L21/67 ,  B08B7/00 ,  H01L21/687

Abstract: A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.

公开(公告)号：US20190130565A1

公开(公告)日：2019-05-02

申请号：US16169447

申请日：2018-10-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-jae LEE ,  Hyun-hwa OH ,  Se-min KIM ,  Jeong-yong SONG ,  Hyun-Jung LEE

IPC: G06T7/00 ,  G16H50/20 ,  G06N3/08 ,  G06T7/30 ,  A61B5/00

Abstract: A device and a method for medical image processing are provided. The medical image processing method may include: obtaining a plurality of actual medical images corresponding to a plurality of patients and including lesions; training a deep neural network (DNN), based on the plurality of actual medical images, to obtain a first neural network for predicting a variation in a lesion over time, the lesion being included in a first medical image of the plurality of actual medical images, wherein the first medical image is obtained at a first time point; and obtaining, via the first neural network, a second medical image representing a state of the lesion at a second time point different from the first time point.

公开(公告)号：US20180190485A1

公开(公告)日：2018-07-05

申请号：US15826916

申请日：2017-11-30

Applicant: Samsung Electronics Co., Ltd

Inventor： Won-Ho JANG ,  Hyun-Jung LEE ,  Se-Jin PARK ,  Yong-Sun KO ,  Dong-Gyun HAN ,  Woo-Gwan SHIM ,  Jeong-Yong BAE ,  Woo-Young KIM ,  Boong KIM

IPC: H01L21/02 ,  H01L21/67 ,  B08B7/00

CPC classification number: H01L21/02101 ,  B08B3/08 ,  B08B7/0021 ,  B08B2203/007 ,  H01L21/67017 ,  H01L21/67034 ,  H01L21/67103 ,  H01L21/6719 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/68742 ,  H01L21/6875

Abstract: A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.