-
公开(公告)号:US10070062B2
公开(公告)日:2018-09-04
申请号:US15598911
申请日:2017-05-18
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hae In Chung , Jin Won Lee
Abstract: An electronic device is provided which includes a housing, a display, a camera, a memory, and a processor. The camera includes a lens barrel, a first rotary member including a first rotary shaft and a first contact part, a second rotary member including a second rotary shaft and a second contact part, a frame, and a control circuit. The first rotary member rotates about the first rotary shaft in a first direction by driving a first actuator, one end of which is coupled to the first rotary shaft and an opposite end of which contacts the first contact part, and the second rotary member rotates about the second rotary shaft in a second direction that is substantially perpendicular to the first direction by driving a second actuator, one end of which is coupled to the second rotary shaft and an opposite end of which contacts the second contact part.
-
公开(公告)号:US10447908B2
公开(公告)日:2019-10-15
申请号:US15785868
申请日:2017-10-17
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jin Won Lee , Jung Ho Park , Chong Sam Chung
IPC: H04N5/225 , H04N5/232 , H04N13/239
Abstract: An electronic device includes a first camera for shooting in a first direction, a second camera for shooting in the first direction, and at least one processor for processing images collected through the first camera and the second camera. A specified spacing distance is maintained between the first camera and the second camera. Within a shortest focusable distance of the first camera, a first capture area of the first camera is included in a second capture area of the second camera or makes contact with an inside of the second capture area of the second camera.
-
公开(公告)号:US11189615B2
公开(公告)日:2021-11-30
申请号:US16739357
申请日:2020-01-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Seung Soo Hong , Jeong Yun Lee , Geum Jung Seong , Jin Won Lee , Hyun Ho Jung
IPC: H01L29/78 , H01L29/06 , H01L29/66 , H01L27/088 , H01L27/02 , H01L21/8234 , H01L27/11
Abstract: A semiconductor device including a plurality of active regions extending in a first direction on a substrate; a device isolation layer between the plurality of active regions such that upper portions of the plurality of active regions protrude from the device isolation layer; a first gate electrode and a second gate electrode extending in a second direction crossing the first direction and intersecting the plurality of active regions, respectively, on the substrate, the first gate electrode being spaced apart from the second gate electrode in the second direction; a first gate separation layer between the first gate electrode and the second gate electrode; and a second gate separation layer under the first gate separation layer and between the first gate electrode and the second gate electrode, the second gate separation layer extending into the device isolation layer in a third direction crossing the first direction and the second direction.
-
公开(公告)号:US11094660B2
公开(公告)日:2021-08-17
申请号:US16560311
申请日:2019-09-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jung Soo Kim , Pyung Hwa Han , Sung Hawn Bae , Jin Won Lee
IPC: H01L21/48 , H01L23/00 , H01L23/31 , H01L23/498 , H01L25/16 , H01L23/13 , H01L21/683 , H01L21/56
Abstract: A semiconductor package includes: a connection structure having first and second surfaces opposing each other and including a redistribution layer; a semiconductor chip disposed on the first surface of the connection structure and having connection pads connected to the redistribution layer; an encapsulant disposed on the first surface of the connection structure and encapsulating the semiconductor chip; a passivation layer disposed on the second surface of the connection structure and having a plurality of first and second openings exposing, respectively, first and second regions of the redistribution layer; and a plurality of underbump metal layers connected to the first region of the redistribution layer through the plurality of first openings, respectively.
-
公开(公告)号:US10983414B2
公开(公告)日:2021-04-20
申请号:US16147359
申请日:2018-09-28
Applicant: Samsung Electronics Co., Ltd
Inventor: Kwang Seok Byon , Jae Mu Yun , Young Jae Hwang , Jin Won Lee
IPC: G03B5/02 , G03B13/36 , H02K11/21 , H02K41/035 , G02B13/00 , H04N5/225 , H04N5/232 , G03B3/10 , G03B17/17 , G02B27/64 , G03B5/00
Abstract: A camera module includes a lens unit including one or more lenses, wherein at least some of the one or more lenses are movable along a path corresponding to optical axes of the one or more lenses, and a driving unit to move the at least some lenses along the path. The driving unit includes a magnet physically connected with the at least some lenses, a coil to form a magnetic field such that the magnet moves along the path, and a magnetic substance disposed on one surface of the coil opposite to another surface of the coil, which is adjacent to the magnet. The magnetic substance adapts the at least some lenses, which are physically connected with the magnet, to a specified position of the path by using magnetic force between the magnet and the magnetic substance, which is formed as the coil approaches the magnet.
-
公开(公告)号:US11901359B2
公开(公告)日:2024-02-13
申请号:US17521011
申请日:2021-11-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Seung Soo Hong , Jeong Yun Lee , Geum Jung Seong , Jin Won Lee , Hyun Ho Jung
IPC: H01L21/8234 , H01L27/088 , H01L27/02 , H01L29/66 , H10B10/00
CPC classification number: H01L27/0886 , H01L21/823418 , H01L21/823431 , H01L21/823437 , H01L21/823475 , H01L21/823481 , H01L27/0207 , H01L29/66545 , H10B10/12
Abstract: A semiconductor device including a plurality of active regions extending in a first direction on a substrate; a device isolation layer between the plurality of active regions such that upper portions of the plurality of active regions protrude from the device isolation layer; a first gate electrode and a second gate electrode extending in a second direction crossing the first direction and intersecting the plurality of active regions, respectively, on the substrate, the first gate electrode being spaced apart from the second gate electrode in the second direction; a first gate separation layer between the first gate electrode and the second gate electrode; and a second gate separation layer under the first gate separation layer and between the first gate electrode and the second gate electrode, the second gate separation layer extending into the device isolation layer in a third direction crossing the first direction and the second direction.
-
-
-
-
-