公开(公告)号：US09929099B2

公开(公告)日：2018-03-27

申请号：US15357299

申请日：2016-11-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： VietHa Nguyen ,  Wookyung You ,  Inoue Naoya ,  Hak-Sun Lee ,  Byung-Kwon Cho ,  Songyi Han ,  Jongmin Baek ,  Jiwon Kang ,  Byunghee Kim ,  Young-Ju Park ,  Sanghoon Ahn ,  Jiwon Yun ,  Naein Lee ,  YoungWoo Cho

IPC: H01L23/48 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L23/53295 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53266

Abstract: A semiconductor device includes an interlayer insulating layer including a first insulating layer on a substrate, and a plurality of interconnections in the first insulating layer. The interlayer insulating layer includes a first region, and a second region including an air gap. The air gap is defined between a pair of the interconnections in the second region. A top surface of the first insulating layer of the first region is lower than a top surface of at least one of the interconnections in the first region.

公开(公告)号：US10714472B2

公开(公告)日：2020-07-14

申请号：US15676317

申请日：2017-08-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kee Sang Kwon ,  Boun Yoon ,  Sangjine Park ,  Myunggeun Song ,  Ki-Hyung Ko ,  Jiwon Yun

IPC: H01L29/51 ,  H01L27/088 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/49

Abstract: Semiconductor devices may include a substrate, gate electrodes on the substrate, and source/drain regions at both sides of each of the gate electrodes. Each of the gate electrodes may include a gate insulating pattern on the substrate, a lower work-function electrode pattern that is on the gate insulating pattern and has a recessed upper surface, and an upper work-function electrode pattern that conformally extends on the recessed upper surface of the lower work function electrode pattern. Topmost surfaces of the lower work-function electrode patterns may be disposed at an equal level, and the upper work-function electrode patterns may have different thicknesses from each other.

公开(公告)号：US10186485B2

公开(公告)日：2019-01-22

申请号：US15897465

申请日：2018-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： VietHa Nguyen ,  Wookyung You ,  Inoue Naoya ,  Hak-Sun Lee ,  Byung-Kwon Cho ,  Songyi Han ,  Jongmin Baek ,  Jiwon Kang ,  Byunghee Kim ,  Young-Ju Park ,  Sanghoon Ahn ,  Jiwon Yun ,  Naein Lee ,  YoungWoo Cho

IPC: H01L23/48 ,  H01L23/532 ,  H01L23/522

Abstract: A semiconductor device includes an interlayer insulating layer including a first insulating layer on a substrate, and a plurality of interconnections in the first insulating layer. The interlayer insulating layer includes a first region, and a second region including an air gap. The air gap is defined between a pair of the interconnections in the second region. A top surface of the first insulating layer of the first region is lower than a top surface of at least one of the interconnections in the first region.

公开(公告)号：US20180174977A1

公开(公告)日：2018-06-21

申请号：US15897465

申请日：2018-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： VietHa Nguyen ,  Wookyung You ,  Inoue Naoya ,  Hak-Sun Lee ,  Byung-Kwon Cho ,  Songyi Han ,  Jongmin Baek ,  Jiwon Kang ,  Byunghee Kim ,  Young-Ju Park ,  Sanghoon Ahn ,  Jiwon Yun ,  Naein Lee ,  YoungWoo Cho

IPC: H01L23/532 ,  H01L23/522

CPC classification number: H01L23/53295 ,  H01L21/7682 ,  H01L21/76885 ,  H01L23/5222 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/53266

Abstract: A semiconductor device includes an interlayer insulating layer including a first insulating layer on a substrate, and a plurality of interconnections in the first insulating layer. The interlayer insulating layer includes a first region, and a second region including an air gap. The air gap is defined between a pair of the interconnections in the second region. A top surface of the first insulating layer of the first region is lower than a top surface of at least one of the interconnections in the first region.

公开(公告)号：US20170170184A1

公开(公告)日：2017-06-15

申请号：US15357299

申请日：2016-11-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： VietHa Nguyen ,  Wookyung You ,  Inoue Naoya ,  Hak-Sun Lee ,  Byung-Kwon Cho ,  Songyi Han ,  Jongmin Baek ,  Jiwon Kang ,  Byunghee Kim ,  Young-Ju Park ,  Sanghoon Ahn ,  Jiwon Yun ,  Naein Lee ,  YoungWoo Cho

IPC: H01L27/105 ,  H01L29/06

CPC classification number: H01L23/53295 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53266

Abstract: A semiconductor device includes an interlayer insulating layer including a first insulating layer on a substrate, and a plurality of interconnections in the first insulating layer. The interlayer insulating layer includes a first region, and a second region including an air gap. The air gap is defined between a pair of the interconnections in the second region. A top surface of the first insulating layer of the first region is lower than a top surface of at least one of the interconnections in the first region.