公开(公告)号：US09716162B2

公开(公告)日：2017-07-25

申请号：US14697829

申请日：2015-04-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangjine Park ,  Jae-Jik Baek ,  Myunggeun Song ,  Boun Yoon ,  Sukhun Choi ,  Jeongnam Han

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/49

CPC classification number: H01L29/66545 ,  H01L21/0228 ,  H01L21/31051 ,  H01L21/31111 ,  H01L21/76897 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/4983 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851

Abstract: Provided is a semiconductor device including a substrate with an active pattern, a gate electrode crossing the active pattern, and a gate capping pattern on the gate electrode. The gate capping pattern may have a width larger than that of the gate electrode, and the gate capping pattern may include extended portions extending toward the substrate and at least partially covering both sidewalls of the gate electrode.

公开(公告)号：US12125687B2

公开(公告)日：2024-10-22

申请号：US17709613

申请日：2022-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngdo Kim ,  Sungyong Lim ,  Daewon Kang ,  Sungyeol Kim ,  Sangki Nam ,  Myunggeun Song ,  Byungkook Cho ,  Hyeoncheol Jin ,  Jonghun Pi

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32715 ,  H01J37/32183 ,  H01J37/32935 ,  H01J2237/24564 ,  H01J2237/3341 ,  H01L21/6833

Abstract: A semiconductor processing system includes: a semiconductor processing chamber including an electrostatic chuck disposed in a chamber housing, and a first power supplier for supplying first radio frequency (RF) power to an internal electrode disposed in the electrostatic chuck; a voltage measuring device for measuring a voltage corresponding to the first RF power to output a digital signal; and a control device for outputting an interlock control signal to the semiconductor processing chamber, when it is determined that the voltage increases to be within a predetermined reference range based on the digital signal. The electrostatic chuck is configured to enable a wafer to be seated on a surface of the electrostatic chuck.

公开(公告)号：US10714472B2

公开(公告)日：2020-07-14

申请号：US15676317

申请日：2017-08-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kee Sang Kwon ,  Boun Yoon ,  Sangjine Park ,  Myunggeun Song ,  Ki-Hyung Ko ,  Jiwon Yun

IPC: H01L29/51 ,  H01L27/088 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/49

Abstract: Semiconductor devices may include a substrate, gate electrodes on the substrate, and source/drain regions at both sides of each of the gate electrodes. Each of the gate electrodes may include a gate insulating pattern on the substrate, a lower work-function electrode pattern that is on the gate insulating pattern and has a recessed upper surface, and an upper work-function electrode pattern that conformally extends on the recessed upper surface of the lower work function electrode pattern. Topmost surfaces of the lower work-function electrode patterns may be disposed at an equal level, and the upper work-function electrode patterns may have different thicknesses from each other.