公开(公告)号：US08906757B2

公开(公告)日：2014-12-09

申请号：US13674386

申请日：2012-11-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myeong-Cheol Kim ,  Il-Sup Kim ,  Cheol Kim ,  Jong-Chan Shin ,  Jong-Wook Lee ,  Choong-Ho Lee ,  Si-Young Choi ,  Jong-Seo Hong

IPC: H01L21/00 ,  H01L21/84 ,  H01L21/308 ,  H01L21/033

CPC classification number: H01L27/0886 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L29/16

Abstract: Methods of forming patterns of a semiconductor device are provided. The methods may include forming a hard mask film on a semiconductor substrate. The methods may include forming first and second sacrificial film patterns that are spaced apart from each other on the hard mask film. The methods may include forming a first spacer on opposing sidewalls of the first sacrificial film pattern and a second spacer on opposing sidewalls of the second sacrificial film pattern. The methods may include removing the first and second sacrificial film patterns. The methods may include trimming the second spacer such that a line width of the second spacer becomes smaller than a line width of the first spacer. The methods may include forming first and second hard mask film patterns by etching the hard mask film using the first spacer and the trimmed second spacer as an etch mask.

Abstract translation: 提供了形成半导体器件的图案的方法。 所述方法可以包括在半导体衬底上形成硬掩模膜。 所述方法可以包括形成在硬掩模膜上彼此间隔开的第一和第二牺牲膜图案。 所述方法可以包括在第一牺牲膜图案的相对侧壁上形成第一间隔物，以及在第二牺牲膜图案的相对侧壁上形成第二间隔物。 所述方法可以包括去除第一和第二牺牲膜图案。 所述方法可以包括修整第二间隔物，使得第二间隔物的线宽变得小于第一间隔物的线宽。 所述方法可以包括通过使用第一间隔物和修剪的第二间隔物作为蚀刻掩模蚀刻硬掩模膜来形成第一和第二硬掩模膜图案。

公开(公告)号：US20150076617A1

公开(公告)日：2015-03-19

申请号：US14548871

申请日：2014-11-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myeong-Cheol Kim ,  Il-Sup Kim ,  Cheol Kim ,  Jong-Chan Shin ,  Jong-Wook Lee ,  Choong-Ho Lee ,  Si-Young Choi ,  Jong-Seo Hong

IPC: H01L27/088 ,  H01L29/16

CPC classification number: H01L27/0886 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L29/16

Abstract: Methods of forming patterns of a semiconductor device are provided. The methods may include forming a hard mask film on a semiconductor substrate. The methods may include forming first and second sacrificial film patterns that are spaced apart from each other on the hard mask film. The methods may include forming a first spacer on opposing sidewalls of the first sacrificial film pattern and a second spacer on opposing sidewalls of the second sacrificial film pattern. The methods may include removing the first and second sacrificial film patterns. The methods may include trimming the second spacer such that a line width of the second spacer becomes smaller than a line width of the first spacer. The methods may include forming first and second hard mask film patterns by etching the hard mask film using the first spacer and the trimmed second spacer as an etch mask.

Abstract translation: 提供了形成半导体器件的图案的方法。 所述方法可以包括在半导体衬底上形成硬掩模膜。 所述方法可以包括形成在硬掩模膜上彼此间隔开的第一和第二牺牲膜图案。 所述方法可以包括在第一牺牲膜图案的相对侧壁上形成第一间隔物，以及在第二牺牲膜图案的相对侧壁上形成第二间隔物。 所述方法可以包括去除第一和第二牺牲膜图案。 所述方法可以包括修整第二间隔物，使得第二间隔物的线宽变得小于第一间隔物的线宽。 所述方法可以包括通过使用第一间隔物和修剪的第二间隔物作为蚀刻掩模蚀刻硬掩模膜来形成第一和第二硬掩模膜图案。

公开(公告)号：US20130143372A1

公开(公告)日：2013-06-06

申请号：US13674386

申请日：2012-11-12

Applicant: Samsung Electronics Co., Ltd

Inventor： Myeong-Cheol KIM ,  Il-Sup Kim ,  Cheol Kim ,  Jong-Chan Shin ,  Jong-Wook Lee ,  Choong-Ho Lee ,  Si-Young Choi ,  Jong-Seo Hong

IPC: H01L21/308

CPC classification number: H01L27/0886 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L29/16

Abstract: Methods of forming patterns of a semiconductor device are provided. The methods may include forming a hard mask film on a semiconductor substrate. The methods may include forming first and second sacrificial film patterns that are spaced apart from each other on the hard mask film. The methods may include forming a first spacer on opposing sidewalls of the first sacrificial film pattern and a second spacer on opposing sidewalls of the second sacrificial film pattern. The methods may include removing the first and second sacrificial film patterns. The methods may include trimming the second spacer such that a line width of the second spacer becomes smaller than a line width of the first spacer. The methods may include forming first and second hard mask film patterns by etching the hard mask film using the first spacer and the trimmed second spacer as an etch mask.