公开(公告)号：US20240274661A1

公开(公告)日：2024-08-15

申请号：US18507606

申请日：2023-11-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungyoung YOON ,  Jonghwa SHIN ,  Minyeul LEE ,  Sungyeol KIM ,  Taekjin KIM ,  Meehyun LIM ,  Sungyong LIM

IPC: H01L29/06

CPC classification number: H01L29/0657 ,  H01L29/0692

Abstract: A dielectric structure may include: an insulating layer extending in a first direction; a plurality of conductor layers disposed on a first surface of the insulating layer and spaced apart from each other in the first direction; at least one semiconductor layer disposed on a second surface of the insulating layer, opposite to the first surface, and overlapping each of at least two conductor layers adjacent to each other among the plurality of conductor layers in a second direction intersecting the first direction; a first protective layer covering the plurality of conductor layers on the first surface of the insulating layer; and a second protective layer covering the at least one semiconductor layer on the second surface of the insulating layer.

公开(公告)号：US20240258443A1

公开(公告)日：2024-08-01

申请号：US18630449

申请日：2024-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Insung JOE ,  Jonghwa SHIN ,  Joonkyo JUNG ,  Jong Uk KIM

IPC: H01L31/0232 ,  H01L31/102

CPC classification number: H01L31/02327 ,  H01L31/102

Abstract: A light sensing device includes a semiconductor layer including a distributed Bragg reflector including a first surface of the semiconductor layer, and a photoelectric conversion unit including a second surface of the semiconductor layer, and the distributed Bragg reflector has a plurality of holes each having, in a cross-sectional view, a width gradually changing from a first width to a second width according to a width change period; a first electrode in one region of the semiconductor layer; and a second electrode on the second surface of the semiconductor layer and having a reflective metal.

公开(公告)号：US20220082822A1

公开(公告)日：2022-03-17

申请号：US17519347

申请日：2021-11-04

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jeongyub LEE ,  Reehyang KIM ,  Jonghwa SHIN ,  Kiyeon YANG ,  Yongsung KIM ,  Jaekwan KIM ,  Changseung LEE ,  Narae HAN

IPC: G02B27/00 ,  G02B5/08 ,  G02B3/02 ,  G02B1/00

Abstract: Provided in a phase shifting device including a plurality of metal layers and a plurality of first dielectric layers, a metal layer of the plurality of metal layers and a first dielectric layer of the plurality of first dielectric layers being alternately stacked in a first direction, and a second dielectric layer disposed on a side surface of the stacked structure in a second direction, wherein the first dielectric layer includes a first material having a first dielectric constant and the second dielectric layer includes a second material having a second dielectric constant, and wherein the second dielectric constant is greater than the first dielectric constant.

公开(公告)号：US20220384666A1

公开(公告)日：2022-12-01

申请号：US17671697

申请日：2022-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Insung JOE ,  Jonghwa SHIN ,  Joonkyo JUNG ,  Jong Uk KIM

IPC: H01L31/0232 ,  H01L31/102

Abstract: A light sensing device includes a semiconductor layer including a distributed Bragg reflector including a first surface of the semiconductor layer, and a photoelectric conversion unit including a second surface of the semiconductor layer, and the distributed Bragg reflector has a plurality of holes each having, in a cross-sectional view, a width gradually changing from a first width to a second width according to a width change period; a first electrode in one region of the semiconductor layer; and a second electrode on the second surface of the semiconductor layer and having a reflective metal.