公开(公告)号：US20240045336A1

公开(公告)日：2024-02-08

申请号：US18133118

申请日：2023-04-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sookyung KIM ,  Chan HWANG ,  Jonghyun JUNG ,  Moosong LEE

IPC: G03F7/20 ,  G03F7/004

CPC classification number: G03F7/2004 ,  G03F7/2022 ,  G03F7/0045

Abstract: A method for forming a resist pattern is disclosed. According to the method, a photosensitive layer is formed on a substrate by using an inorganic photoresist. The photosensitive layer is irradiated with a deep ultraviolet (DUV) light. The photosensitive layer is irradiated with an extreme ultraviolet (EUV) light after the irradiation of the DUV light. The photosensitive layer exposed to the EUV light is heated. The heated photosensitive layer is developed.

公开(公告)号：US20240313066A1

公开(公告)日：2024-09-19

申请号：US18409031

申请日：2024-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soo Kyung KIM ,  Chan HWANG ,  Jonghyun JUNG ,  Moosong LEE

IPC: H01L29/40 ,  G03F7/00 ,  G03F7/20 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L29/401 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/32139 ,  G03F7/2004 ,  G03F7/2022 ,  G03F7/7045

Abstract: A method of fabricating a semiconductor device may include providing a substrate including cell and peripheral regions, forming a cell gate structure on the cell region, forming a peripheral gate structure on the peripheral region, forming a bit line structure on the cell region, forming a preliminary conductive layer to cover the bit line structure and the peripheral gate structure, and etching the preliminary conductive layer to form a landing pad and peripheral conductive pads. The etching of the preliminary conductive layer may include forming lower and photoresist layers on the preliminary conductive layer, performing a first exposure process on the photoresist layer, performing a second exposure process on the photoresist layer, and etching the preliminary conductive layer using the photoresist and lower layers as an etch mask. The first exposure process may expose a portion of the photoresist layer that is on the cell region to light.