公开(公告)号：US20230290838A1

公开(公告)日：2023-09-14

申请号：US18181071

申请日：2023-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taehun MYUNG ,  Yuri MASUOKA ,  Kihwang SON ,  Jaehun JEONG ,  Seulki PARK ,  Joongwon JEON ,  Kyunghoon JUNG ,  Yonghyun KO ,  Seungwook LEE

IPC: H01L29/40 ,  H01L29/417 ,  H01L29/78

CPC classification number: H01L29/405 ,  H01L29/41791 ,  H01L29/7851

Abstract: A semiconductor device includes a substrate including an active region, a first gate line and a second gate line in the active region, a first source/drain contact pattern in the active region at one side of the first gate line, a second source/drain contact pattern in the active region at one side of the second gate line, and a dummy source/drain contact pattern in the active region between the first gate line and the second gate line. The first gate line and the second gate line may be spaced apart from each other in the first direction and may extend in the second direction. The second direction may cross the first direction. A size of the dummy source/drain contact pattern may be less than a size of the first source/drain contact pattern and a size of the second source/drain contact pattern.

公开(公告)号：US20240096991A1

公开(公告)日：2024-03-21

申请号：US18219232

申请日：2023-07-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaehyun LIM ,  Subin KIM ,  Jiwon OH ,  Jinho PARK ,  Joongwon JEON

IPC: H01L29/423 ,  H01L27/088 ,  H01L29/06 ,  H01L29/775

CPC classification number: H01L29/42376 ,  H01L27/088 ,  H01L27/0886 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775

Abstract: A semiconductor device includes a substrate including first and second regions; a first active fin extending in a first direction on the first region; a second active fin extending in the first direction on the second region; an isolation pattern on the substrate between the first and second regions; a first gate structure on the first active fin, extending in a second direction perpendicular to the first direction, and onto an upper surface of the isolation pattern; and a second gate structure on the second active fin, extending in the second direction, and onto the upper surface of the isolation pattern, wherein the first gate structure includes a first portion having a first width and a second portion having a second width that is less than the first width, and the second gate structure includes a third portion having the first width and a fourth portion having the second width.