公开(公告)号：US09519125B2

公开(公告)日：2016-12-13

申请号：US14043152

申请日：2013-10-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwan-seon Lee ,  Jung-hyun Lee

IPC: G02B15/16 ,  G02B15/173

CPC classification number: G02B15/16 ,  G02B15/173

Abstract: A zoom lens and a photographing apparatus including the zoom lens are provided. The zoom lens includes a first lens group having a positive refractive power, a second lens group having a negative refractive power, a third lens group having a positive refractive power, and a fourth lens group having a positive refractive power, all of which are arranged sequentially from an object side to an image side. The second lens group may include a first negative lens, a second negative lens, and a first positive lens. The second lens group may also satisfy 5.6≦|fG2n2/fw|≦10.0, where fG2n2 is a focal length of the second negative lens therein and fw is an overall focal length of the zoom lens at a wide-angle position.

Abstract translation: 提供了包括变焦透镜的变焦透镜和摄影装置。 变焦透镜包括具有正折射光焦度的第一透镜组，具有负屈光力的第二透镜组，具有正折光力的第三透镜组和具有正折射光焦度的第四透镜组，所述第四透镜组布置成 从物体侧到图像侧。 第二透镜组可以包括第一负透镜，第二负透镜和第一正透镜。 第二透镜组也可以满足5.6≤| fG2n2 / fw |≤10.0，其中fG2n2是其中第二负透镜的焦距，fw是变焦透镜在广角位置处的总焦距。

公开(公告)号：US09318573B2

公开(公告)日：2016-04-19

申请号：US13973584

申请日：2013-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-Wook Moon ,  Joong S. Jeon ,  Jung-hyun Lee ,  Nae-In Lee ,  Yeon-Sik Park ,  Hwa-Sung Rhee ,  Ho Lee ,  Se-Young Cho ,  Suk-Pil Kim

IPC: H01L21/02 ,  H01L29/66 ,  B82Y10/00 ,  H01L29/10 ,  H01L29/78 ,  H01L29/786 ,  H01L51/42 ,  H01L29/06 ,  B82Y15/00

CPC classification number: H01L29/66439 ,  B82Y10/00 ,  B82Y15/00 ,  H01L21/02365 ,  H01L21/02601 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/1033 ,  H01L29/66742 ,  H01L29/7839 ,  H01L29/78684 ,  H01L29/78696 ,  H01L51/426 ,  H01L2221/1094

Abstract: A field effect transistor having at least one Ge nanorod and a method of manufacturing the field effect transistor are provided. The field effect transistor may include a gate insulation layer formed on a silicon substrate, at least one nanorod embedded in the gate insulation layer having both ends thereof exposed, a source electrode and a drain electrode connected to opposite sides of the at least one Ge nanorod, and a gate electrode formed on the gate insulation layer between the source electrode and the drain electrode.

Abstract translation: 提供具有至少一个Ge纳米棒的场效应晶体管和制造场效应晶体管的方法。 场效应晶体管可以包括形成在硅衬底上的栅极绝缘层，至少一个纳米棒，其嵌入在其两端露出的栅极绝缘层中，源电极和漏电极连接到至少一个Ge纳米棒的相对侧 以及形成在源电极和漏电极之间的栅极绝缘层上的栅电极。

公开(公告)号：US20140185146A1

公开(公告)日：2014-07-03

申请号：US14043152

申请日：2013-10-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwan-seon Lee ,  Jung-hyun Lee

IPC: G02B15/14

CPC classification number: G02B15/16 ,  G02B15/173

Abstract: A zoom lens and a photographing apparatus including the zoom lens are provided. The zoom lens includes a first lens group having a positive refractive power, a second lens group having a negative refractive power, a third lens group having a positive refractive power, and a fourth lens group having a positive refractive power, all of which are arranged sequentially from an object side to an image side. The second lens group may include a first negative lens, a second negative lens, and a first positive lens. The second lens group may also satisfy 5.6≦|fG2n2/fw|≦10.0, where fG2n2 is a focal length of the second negative lens therein and fw is an overall focal length of the zoom lens at a wide-angle position.

Abstract translation: 提供了包括变焦透镜的变焦透镜和摄影装置。 变焦透镜包括具有正折射光焦度的第一透镜组，具有负屈光力的第二透镜组，具有正折光力的第三透镜组和具有正折射光焦度的第四透镜组，所述第四透镜组布置成 从物体侧到图像侧。 第二透镜组可以包括第一负透镜，第二负透镜和第一正透镜。 第二透镜组也可以满足5.6＆nlE; | fG2n2 / fw |＆nlE; 10.0，其中fG2n2是其中第二负透镜的焦距，fw是变焦透镜在广角位置处的总焦距。