公开(公告)号：US20200144411A1

公开(公告)日：2020-05-07

申请号：US16414186

申请日：2019-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hyun YOO ,  Ui-hui Kwon ,  Da-won Jeong ,  Jae-ho Kim ,  Jun-hyeok Kim ,  Kang-hyun Baek ,  Kyu-ok Lee

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423

Abstract: A power device includes a drift layer of a second conductivity type located on a semiconductor layer of a first conductivity type, a first source region of the second conductivity type and a second source region of the second conductivity type, located on the drift layer to be apart from each other, and a gate electrode on the drift layer between the first and second source regions with a gate insulating layer between the gate electrode and the drift layer, wherein the gate electrode includes a first gate electrode and a second gate electrode adjacent to the first source region and the second source region, respectively, and a third gate electrode between the first and second gate electrodes, wherein the third gate electrode is floated or grounded.

公开(公告)号：US10700193B2

公开(公告)日：2020-06-30

申请号：US16414186

申请日：2019-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hyun Yoo ,  Ui-hui Kwon ,  Da-won Jeong ,  Jae-ho Kim ,  Jun-hyeok Kim ,  Kang-hyun Baek ,  Kyu-ok Lee

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/423 ,  H01L29/40 ,  H01L29/06

Abstract: A power device includes a drift layer of a second conductivity type located on a semiconductor layer of a first conductivity type, a first source region of the second conductivity type and a second source region of the second conductivity type, located on the drift layer to be apart from each other, and a gate electrode on the drift layer between the first and second source regions with a gate insulating layer between the gate electrode and the drift layer, wherein the gate electrode includes a first gate electrode and a second gate electrode adjacent to the first source region and the second source region, respectively, and a third gate electrode between the first and second gate electrodes, wherein the third gate electrode is floated or grounded.

公开(公告)号：US09478536B2

公开(公告)日：2016-10-25

申请号：US14962401

申请日：2015-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kang-hyun Baek ,  Sang-kyu Oh ,  Yongwoo Jeon

IPC: H01L27/06 ,  H01L27/092 ,  H01L29/78

CPC classification number: H01L27/0629 ,  H01L21/823821 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/66545 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor device with fin capacitors is disclosed. The device includes a substrate including a first region and a second region; first and second active fins at the first and second regions, respectively, of the substrate; a device isolation layer in a first trench between the first active fins; first and second gate electrodes that cross the first and second active fins, respectively; a first dielectric layer between the first active fins and the first gate electrode to extend along the first gate electrode, and a second dielectric layer between the second active fins and the second gate electrode to extend along the second gate electrode. The first dielectric layer is spaced apart from a bottom surface of the first trench by the device isolation layer between the bottom surface of the first trench and the first dielectric layer. The second dielectric layer is in direct contact with a bottom surface of a second trench between the second active fins.

Abstract translation: 公开了一种具有散热片电容器的半导体器件。 该装置包括：包括第一区域和第二区域的基板; 分别在基板的第一和第二区域的第一和第二活性散热片; 在所述第一活性鳍片之间的第一沟槽中的器件隔离层; 分别与第一和第二活性鳍片交叉的第一和第二栅极电极; 在所述第一活性鳍片和所述第一栅电极之间沿着所述第一栅电极延伸的第一介电层，以及在所述第二活性鳍片和所述第二栅极之间延伸的第二介电层，以沿着所述第二栅电极延伸。 第一电介质层通过第一沟槽的底表面和第一介电层之间的器件隔离层与第一沟槽的底表面间隔开。 第二电介质层与第二活性鳍片之间的第二沟槽的底表面直接接触。