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    Electronic device including input apparatus
    2.
    发明授权
    Electronic device including input apparatus 有权

    公开(公告)号：US10411702B2

    公开(公告)日：2019-09-10

    申请号：US15213973

    申请日：2016-07-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Su-Jin Jung ,  Yongwoo Jeon ,  Jangje Park ,  Sang-Pil Lee

    IPC: H03K17/975 ,  H03K17/96 ,  G06F1/16 ,  H05K1/18 ,  H05K1/11 ,  H04M1/02

    Abstract: An electronic device is provided. The electronic device includes a housing including a window, configured to form a 1st side of the electronic device, and a 2nd side of the electronic device directed in an opposite direction of the 1st side of the electronic device, a circuit board between the 1st side and the 2nd side of the electronic device, and including an input circuit configured to detect an input based on a change in a capacitance, a spacer between the window and the circuit board, and having at least one space formed on one side facing the circuit board, a contact electrically connected to the input circuit by being mounted to one side of the circuit board, and contained in the at least one space, and a conductive plate coupled to the spacer, and electrically connected to the contact through the at least one space.

    Method and electronic device for guiding semiconductor manufacturing process
    4.
    发明授权
    Method and electronic device for guiding semiconductor manufacturing process 有权

    公开(公告)号：US11693386B2

    公开(公告)日：2023-07-04

    申请号：US16992919

    申请日：2020-08-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jaeho Kim ,  Kanghyun Baek ,  Kwanghee Lee ,  Yongwoo Jeon ,  Uihui Kwon ,  Yoonsuk Kim

    IPC: G05B19/4097 ,  G06N20/00

    CPC classification number: G05B19/4097 ,  G06N20/00 ,  G05B2219/45031

    Abstract: A method of guiding a semiconductor manufacturing process includes receiving semiconductor manufacturing process data corresponding to a target semiconductor product, generating first semiconductor characteristic data corresponding to the semiconductor manufacturing process data by using a technology computer-aided design (TCAD) model trained through machine learning based on training data including TCAD simulation data, generating second semiconductor characteristic data corresponding to the semiconductor manufacturing process data by using a compact model generated based on information of measurement of at least one semiconductor characteristic of a first semiconductor product, generating, based on the first semiconductor characteristic data and the second semiconductor characteristic data, a plurality of process policies respectively corresponding to a plurality of strategic references, by using a plurality of strategy models; and providing a final process policy corresponding to the target semiconductor product based on the plurality of process policies.

    Semiconductor protection device
    6.
    发明授权
    Semiconductor protection device 有权

    公开(公告)号：US12002890B2

    公开(公告)日：2024-06-04

    申请号：US17585284

    申请日：2022-01-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jaehyun Yoo ,  Kyuok Lee ,  Uihui Kwon ,  Junhyeok Kim ,  Yongwoo Jeon ,  Dawon Jeong ,  Jaehyok Ko

    IPC: H01L29/86 ,  H01L29/06 ,  H01L29/40 ,  H01L29/861

    CPC classification number: H01L29/861 ,  H01L29/0634 ,  H01L29/404 ,  H01L29/0649

    Abstract: A semiconductor protection device includes: an N-type epitaxial layer, a device isolation layer disposed in the N-type epitaxial layer, an N-type drift region disposed below the device isolation layer, an N-type well disposed in the N-type drift region, first and second P-type drift regions, respectively disposed to be in contact with the device isolation layer, and spaced apart from the N-type drift region, first and second P-type doped regions, respectively disposed in the first and second P-type drift regions, first and second N-type floating wells, respectively disposed in the first and second P-type drift regions to be spaced apart from the first and second P-type doped regions, and disposed to be in contact with the device isolation layer, and first and second contact layer, respectively disposed to cover the first and second N-type floating well, to be in contact with the device isolation layer.

    METHOD AND ELECTRONIC DEVICE FOR GUIDING SEMICONDUCTOR MANUFACTURING PROCESS
    7.
    发明申请
    METHOD AND ELECTRONIC DEVICE FOR GUIDING SEMICONDUCTOR MANUFACTURING PROCESS 有权

    公开(公告)号：US20210063999A1

    公开(公告)日：2021-03-04

    申请号：US16992919

    申请日：2020-08-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jaeho KIM ,  Kanghyun Baek ,  Kwanghee LEE ,  Yongwoo Jeon ,  Uihui KWON ,  Yoonsuk Kim

    IPC: G05B19/4097 ,  G06N20/00

    Abstract: A method of guiding a semiconductor manufacturing process includes receiving semiconductor manufacturing process data corresponding to a target semiconductor product, generating first semiconductor characteristic data corresponding to the semiconductor manufacturing process data by using a technology computer-aided design (TCAD) model trained through machine learning based on training data including TCAD simulation data, generating second semiconductor characteristic data corresponding to the semiconductor manufacturing process data by using a compact model generated based on information of measurement of at least one semiconductor characteristic of a first semiconductor product, generating, based on the first semiconductor characteristic data and the second semiconductor characteristic data, a plurality of process policies respectively corresponding to a plurality of strategic references, by using a plurality of strategy models; and providing a final process policy corresponding to the target semiconductor product based on the plurality of process policies.

    Semiconductor device including fin capacitors
    8.
    发明授权
    Semiconductor device including fin capacitors 有权
    半导体器件包括鳍式电容器

    公开(公告)号：US09478536B2

    公开(公告)日：2016-10-25

    申请号：US14962401

    申请日：2015-12-08

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kang-hyun Baek ,  Sang-kyu Oh ,  Yongwoo Jeon

    IPC: H01L27/06 ,  H01L27/092 ,  H01L29/78

    CPC classification number: H01L27/0629 ,  H01L21/823821 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/66545 ,  H01L29/7848 ,  H01L29/785

    Abstract: A semiconductor device with fin capacitors is disclosed. The device includes a substrate including a first region and a second region; first and second active fins at the first and second regions, respectively, of the substrate; a device isolation layer in a first trench between the first active fins; first and second gate electrodes that cross the first and second active fins, respectively; a first dielectric layer between the first active fins and the first gate electrode to extend along the first gate electrode, and a second dielectric layer between the second active fins and the second gate electrode to extend along the second gate electrode. The first dielectric layer is spaced apart from a bottom surface of the first trench by the device isolation layer between the bottom surface of the first trench and the first dielectric layer. The second dielectric layer is in direct contact with a bottom surface of a second trench between the second active fins.

    Abstract translation: 公开了一种具有散热片电容器的半导体器件。 该装置包括：包括第一区域和第二区域的基板; 分别在基板的第一和第二区域的第一和第二活性散热片; 在所述第一活性鳍片之间的第一沟槽中的器件隔离层; 分别与第一和第二活性鳍片交叉的第一和第二栅极电极; 在所述第一活性鳍片和所述第一栅电极之间沿着所述第一栅电极延伸的第一介电层，以及在所述第二活性鳍片和所述第二栅极之间延伸的第二介电层，以沿着所述第二栅电极延伸。 第一电介质层通过第一沟槽的底表面和第一介电层之间的器件隔离层与第一沟槽的底表面间隔开。 第二电介质层与第二活性鳍片之间的第二沟槽的底表面直接接触。

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